STMicroelectronics
STF9N60M2  
Single FETs, MOSFETs

STMicroelectronics
STF9N60M2
278-STF9N60M2
Ersa
STMicroelectronics-STF9N60M2-datasheets-9723781.pdf
MOSFET N-CH 600V 5.5A TO220FP
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STF9N60M2 Description

STF9N60M2 Description

The STF9N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5.5A at 25°C, this device is ideal for power electronics and motor control applications. The STF9N60M2 features a low Rds(on) of 780mΩ at 3A and 10V, ensuring efficient power dissipation and minimal power loss.

STF9N60M2 Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
  • 5.5A Continuous Drain Current (Id) @ 25°C: Suitable for high current applications.
  • Low Rds(on) of 780mΩ @ 3A and 10V: Ensures efficient power dissipation and minimal power loss.
  • 10nC Maximum Gate Charge (Qg) @ 10V: Minimizes switching losses and improves efficiency.
  • 320pF Maximum Input Capacitance (Ciss) @ 100V: Reduces parasitic effects and improves performance.
  • 4V Maximum Threshold Voltage (Vgs(th)) @ 250µA: Provides stable and reliable operation.
  • ±25V Maximum Gate-to-Source Voltage (Vgs): Offers flexibility in gate drive requirements.
  • 20W Maximum Power Dissipation (Tc): Suitable for power electronics applications.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.
  • TO220FP Package: Provides a compact and robust solution for high-power applications.

STF9N60M2 Applications

The STF9N60M2 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, the STF9N60M2 is well-suited for power electronics applications such as power supplies, motor drivers, and inverter systems.
  2. Motor Control: The device's low Rds(on) and high current handling capabilities make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
  3. Industrial Automation: The STF9N60M2's robust performance and high temperature rating (150°C TJ) make it suitable for industrial automation applications, such as robotic control systems and process control equipment.

Conclusion of STF9N60M2

The STF9N60M2 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications requiring high voltage and current handling capabilities. Its low Rds(on), high current ratings, and robust performance make it an ideal choice for power electronics, motor control, and industrial automation applications. With its unique features and advantages over similar models, the STF9N60M2 offers a reliable and efficient solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF9N60M2 Documents

Download datasheets and manufacturer documentation for STF9N60M2

Ersa STF9N60M2      
Ersa STF9N60M2      

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