STMicroelectronics_STD35NF06LT4

STMicroelectronics
STD35NF06LT4  
Single FETs, MOSFETs

STMicroelectronics
STD35NF06LT4
278-STD35NF06LT4
MOSFET N-CH 60V 35A DPAK
In Stock : 3264

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    STD35NF06LT4 Description

    STD35NF06LT4 Description

    The STD35NF06LT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and power handling capabilities. With a drain-source voltage (Vdss) of 60V and continuous drain current (Id) of 35A at 25°C, this device is ideal for demanding power electronic applications.

    STD35NF06LT4 Features

    • Technology: Advanced MOSFET (Metal Oxide) technology for superior performance and reliability.
    • Low On-Resistance: Maximum Rds(on) of 17mΩ at 17.5A and 10V, ensuring minimal power losses.
    • High Input Capacitance: 1700 pF at 25V, providing fast switching capabilities.
    • Low Gate Charge: 33 nC at 4.5V, reducing switching losses and improving efficiency.
    • Robust Voltage Ratings: Maximum Vgs of ±16V and Vdss of 60V for reliable operation in high-voltage applications.
    • Thermal Management: Maximum power dissipation of 80W (Tc), allowing for effective heat dissipation in demanding environments.
    • Mounting Type: Surface Mount for compact and efficient PCB design.
    • Package: DPAK package for high power dissipation and ease of handling.
    • Compliance: ROHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

    STD35NF06LT4 Applications

    The STD35NF06LT4 is well-suited for a variety of high-power applications, including:

    • Power Supplies: High-efficiency power conversion in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    • Motor Drives: Efficient motor control in industrial and automotive applications, such as electric vehicles (EV) and electric scooters.
    • Renewable Energy: Power electronics in solar inverters and wind turbine converters.
    • Industrial Automation: High-power motor drives and control systems in manufacturing and automation equipment.

    Conclusion of STD35NF06LT4

    The STD35NF06LT4 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering superior performance and reliability for high-power applications. Its advanced technology, low on-resistance, and robust voltage ratings make it an ideal choice for demanding power electronic systems. With its compliance to environmental and regulatory standards, the STD35NF06LT4 is a reliable and eco-friendly solution for a wide range of applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Qualification
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD35NF06LT4 Documents

    Download datasheets and manufacturer documentation for STD35NF06LT4

    Ersa Mult Dev Assembly Chg 18/Oct/2019      
    Ersa STD35NF06L      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STD35NF06L View All Specifications      
    Ersa STD35NF06L      

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