STMicroelectronics_STP120NF10

STMicroelectronics
STP120NF10  
Single FETs, MOSFETs

STMicroelectronics
STP120NF10
278-STP120NF10
MOSFET N-CH 100V 110A TO220AB
In Stock : 2179

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STP120NF10 Description

STP120NF10 Description

The STP120NF10 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage of 100V and a continuous drain current of 110A at 25°C, this device is well-suited for power electronics and motor control applications. The STP120NF10 features a low on-resistance of 10.5mOhm at 60A and 10V, ensuring minimal power dissipation and high efficiency.

STP120NF10 Features

  • Low On-Resistance: The STP120NF10 boasts an on-resistance of just 10.5mOhm at 60A and 10V, reducing power losses and improving efficiency.
  • High Drain-to-Source Voltage: Capable of handling 100V, this MOSFET is suitable for a wide range of power electronics applications.
  • Robust Current Handling: With a continuous drain current of 110A at 25°C, the STP120NF10 can manage demanding power requirements.
  • Low Gate Charge: The maximum gate charge is 233nC at 10V, enabling fast switching and reducing switching losses.
  • Low Input Capacitance: The maximum input capacitance is 5200pF at 25V, contributing to faster switching speeds and reduced power consumption.
  • Through-Hole Mounting: The TO220AB package allows for easy integration into existing designs, providing a reliable mechanical connection.
  • Compliance: The STP120NF10 is compliant with RoHS3 and REACH standards, ensuring environmental and safety compliance.

STP120NF10 Applications

The STP120NF10 is ideal for applications where high power handling and efficient switching are critical:

  • Power Electronics: Suitable for power supplies, power converters, and motor drives.
  • Industrial Automation: Ideal for motor control in industrial machinery and robotics.
  • Automotive Applications: Can be used in electric vehicle (EV) charging systems and power management.
  • Renewable Energy: Employed in solar power inverters and wind turbine control systems.

Conclusion of STP120NF10

The STP120NF10 from STMicroelectronics offers a combination of high power handling, low on-resistance, and fast switching capabilities, making it an excellent choice for demanding power electronics applications. Its compliance with industry standards and robust performance characteristics make it a reliable and efficient solution for engineers designing the next generation of power electronics systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP120NF10 Documents

Download datasheets and manufacturer documentation for STP120NF10

Ersa STx120NF10      
Ersa Box Label Chg 28/Jul/2016      
Ersa STP120NF10 View All Specifications      
Ersa STx120NF10      

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