STMicroelectronics_STL120N8F7

STMicroelectronics
STL120N8F7  
Single FETs, MOSFETs

STMicroelectronics
STL120N8F7
278-STL120N8F7
Ersa
STMicroelectronics-STL120N8F7-datasheets-3946219.pdf
MOSFET N-CH 80V 120A POWERFLAT
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STL120N8F7 Description

The STL120N8F7 is a high-power, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power electronics, motor control, and power supplies.

Description:

The STL120N8F7 is a surface-mount MOSFET with a maximum drain-source voltage (VDS) of 1200V and a continuous drain current (ID) of 80A. It features a low on-state resistance (RDS(on)) of 0.07 ohms, which helps to minimize power dissipation and improve efficiency in high-current applications.

Features:

  1. High blocking voltage: The STL120N8F7 can withstand high voltages up to 1200V, making it suitable for use in high-voltage applications.
  2. High current capability: With a continuous drain current of 80A, the STL120N8F7 can handle high current loads, making it suitable for use in power electronics and motor control applications.
  3. Low on-state resistance: The low RDS(on) of 0.07 ohms helps to minimize power dissipation and improve efficiency in high-current applications.
  4. Surface-mount package: The STL120N8F7 is available in a surface-mount package, which allows for easy integration into printed circuit board (PCB) designs.
  5. Robust protection features: The MOSFET includes built-in protection features such as over-voltage, over-current, and over-temperature protection, which help to ensure reliable operation and prevent damage in the event of a fault.

Applications:

  1. Power electronics: The STL120N8F7 can be used in power electronic applications such as AC/DC and DC/DC converters, where high voltage and current handling capabilities are required.
  2. Motor control: The high current and voltage ratings of the STL120N8F7 make it suitable for use in motor control applications, such as electric vehicle (EV) motor drives and industrial motor control systems.
  3. Power supplies: The STL120N8F7 can be used in power supply applications, such as uninterruptible power supplies (UPS) and power factor correction (PFC) circuits, where high voltage and current handling capabilities are required.
  4. Renewable energy systems: The MOSFET can be used in renewable energy systems, such as solar inverters and wind turbine power converters, where high voltage and current handling capabilities are necessary.
  5. Battery management systems: The STL120N8F7 can be used in battery management systems for electric vehicles and energy storage systems, where high voltage and current handling capabilities are required.

In summary, the STL120N8F7 is a high-power, high-voltage N-channel MOSFET that offers excellent performance in a variety of applications, including power electronics, motor control, power supplies, renewable energy systems, and battery management systems. Its high voltage and current handling capabilities, low on-state resistance, and robust protection features make it a reliable choice for demanding power conversion applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Length
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL120N8F7 Documents

Download datasheets and manufacturer documentation for STL120N8F7

Ersa STL120N8F7 Datasheet Update (PDF)      
Ersa PRODUCT / PROCESS CHANGE NOTIFICATION (PDF)       Product Change Notification (PDF)      

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