STMicroelectronics_STD130N6F7

STMicroelectronics
STD130N6F7  
Single FETs, MOSFETs

STMicroelectronics
STD130N6F7
278-STD130N6F7
Ersa
STMicroelectronics-STD130N6F7-datasheets-12094710.pdf
MOSFET N-CHANNEL 60V 80A DPAK
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STD130N6F7 Description

STD130N6F7 Description

The STD130N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C, this device is ideal for demanding power management and control applications. The STD130N6F7 features a low on-resistance (Rds On) of 5mΩ at 40A and 10V, ensuring minimal power loss and high efficiency.

STD130N6F7 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 2600 pF @ 30V - Minimizes input capacitance, reducing switching losses.
  • Gate Charge (Qg): 42 nC @ 10V - Reduces gate charge, improving switching speed and efficiency.
  • Vgs (Max): ±20V - Allows for a wide range of gate voltages, increasing design flexibility.
  • Rds On (Max): 5mΩ @ 40A, 10V - Ensures low on-resistance, minimizing power loss.
  • Vgs(th) (Max): 4V @ 250µA - Provides a low threshold voltage, enabling efficient operation.
  • Series: STripFET™ - Offers advanced performance and reliability.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount applications.
  • Package: DPAK - Provides a robust and compact package for high-power applications.

STD130N6F7 Applications

The STD130N6F7 is well-suited for a variety of high-power applications, including:

  1. Power Management: Ideal for power supply designs, battery management systems, and motor control.
  2. Industrial Automation: Suitable for motor drives, robotics, and other high-power industrial applications.
  3. Automotive: Can be used in electric vehicle (EV) charging systems, powertrain control, and other automotive electronics.
  4. Renewable Energy: Perfect for solar inverters, wind power systems, and other renewable energy applications.

Conclusion of STD130N6F7

The STD130N6F7 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering exceptional performance and reliability for high-power applications. Its unique features, such as low on-resistance, low gate charge, and high drain-to-source voltage, make it an ideal choice for demanding power management and control applications. With its robust DPAK package and surface-mount design, the STD130N6F7 is a versatile solution for a wide range of industries, including power management, industrial automation, automotive, and renewable energy.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Range
Grade
ECCN (EU)
RoHs compliant

STD130N6F7 Documents

Download datasheets and manufacturer documentation for STD130N6F7

Ersa Assembly 21/Dec/2022      
Ersa STD130N6F7 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD130N6F7 Datasheet      

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