STMicroelectronics_STD7NM80

STMicroelectronics
STD7NM80  
Single FETs, MOSFETs

STMicroelectronics
STD7NM80
278-STD7NM80
Ersa
STMicroelectronics-STD7NM80-datasheets-8693062.pdf
MOSFET N-CH 800V 6.5A DPAK
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STD7NM80 Description

STD7NM80 Description

The STD7NM80 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 800V and continuous drain current (Id) of 6.5A at 25°C, this device is ideal for demanding power electronics applications. The STD7NM80 features a DPAK package, making it suitable for surface mount applications in compact spaces.

STD7NM80 Features

  • High Voltage and Current Ratings: The STD7NM80 boasts an impressive drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6.5A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 1.05Ω at 3.25A and 10V Vgs, the STD7NM80 offers low conduction losses, improving efficiency in power conversion applications.
  • Low Gate Charge: The STD7NM80 has a maximum gate charge (Qg) of 18nC at 10V Vgs, reducing switching losses and improving overall efficiency.
  • Robust Package: The DPAK package provides excellent thermal performance and mechanical robustness, making it suitable for high-power applications.
  • Compliance and Certifications: The STD7NM80 is compliant with REACH and RoHS3 regulations, ensuring environmental and safety standards are met.

STD7NM80 Applications

The STD7NM80 is ideal for a variety of high-power applications, including:

  1. Power Supplies: The high voltage and current ratings make it suitable for power supply designs, particularly in industrial and automotive applications.
  2. Motor Control: The low on-resistance and low gate charge make the STD7NM80 an excellent choice for motor control applications, where efficiency and performance are critical.
  3. Inverters: The high voltage rating and low on-resistance make the STD7NM80 suitable for inverter designs, particularly in renewable energy and electric vehicle applications.
  4. Industrial Automation: The robust package and high-performance characteristics make the STD7NM80 ideal for industrial automation applications, where reliability and performance are essential.

Conclusion of STD7NM80

The STD7NM80 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and low on-resistance capabilities. Its robust DPAK package and compliance with environmental and safety regulations make it an ideal choice for a variety of high-power applications, including power supplies, motor control, inverters, and industrial automation. With its unique features and advantages over similar models, the STD7NM80 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD7NM80 Documents

Download datasheets and manufacturer documentation for STD7NM80

Ersa Assembly Site 22/Dec/2022      
Ersa STx7NM80(-1) Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STD7NM80 View All Specifications      
Ersa STx7NM80(-1) Datasheet      

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