STMicroelectronics_STL100N8F7

STMicroelectronics
STL100N8F7  
Single FETs, MOSFETs

STMicroelectronics
STL100N8F7
278-STL100N8F7
Ersa
STMicroelectronics-STL100N8F7-datasheets-612744.pdf
MOSFET N-CH 80V 100A POWERFLAT
In Stock : 8980

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STL100N8F7 Description

STL100N8F7 Description

The STL100N8F7 is a high-performance MOSFET N-CH 80V 100A POWERFLAT from STMicroelectronics. This single FET is designed for high-power applications and offers excellent electrical characteristics. With a maximum drain-to-source voltage of 80V and a continuous drain current of 100A at 25°C, the STL100N8F7 is suitable for demanding power electronics applications.

STL100N8F7 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss in power electronics applications.
  • Input Capacitance (Ciss): 3435 pF @ 40V - Minimizes input capacitance, reducing power consumption and improving performance.
  • Gate Charge (Qg): 46.8 nC @ 10V - Low gate charge for fast switching and reduced power loss.
  • Rds On (Max): 6.1mOhm @ 10A, 10V - Low on-resistance for minimal power loss and high efficiency.
  • Vgs(th) (Max): 4.5V @ 250µA - Ensures reliable and consistent operation across a wide range of input voltages.
  • Series: STripFET™ - STMicroelectronics' advanced FET technology for improved performance and reliability.
  • Mounting Type: Surface Mount - Ideal for high-density PCB designs and automated assembly processes.
  • Power Dissipation: 4.8W (Ta), 120W (Tc) - Capable of handling high power dissipation for demanding applications.
  • RoHS Status: ROHS3 Compliant - Complies with environmental regulations, making it suitable for green electronics designs.

STL100N8F7 Applications

The STL100N8F7 is ideal for a wide range of high-power applications, including:

  1. Power Supplies: Its high drain current and low on-resistance make it suitable for power supply designs, such as SMPS and DC-DC converters.
  2. Motor Drives: The high voltage and current ratings make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
  3. Renewable Energy: Its high power rating and robust performance make it suitable for solar inverters and wind power generation systems.
  4. Industrial Automation: The STL100N8F7 can be used in high-power industrial automation systems, such as robotic arms and conveyor systems.

Conclusion of STL100N8F7

The STL100N8F7 is a high-performance MOSFET from STMicroelectronics, offering excellent electrical characteristics and robust performance for demanding power electronics applications. Its low on-resistance, low gate charge, and high power dissipation capabilities make it an ideal choice for power supplies, motor drives, renewable energy systems, and industrial automation. With its RoHS compliance and advanced STripFET™ technology, the STL100N8F7 is a reliable and environmentally friendly solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL100N8F7 Documents

Download datasheets and manufacturer documentation for STL100N8F7

Ersa Spice Model Tutorial for Power MOSFETS       STL100N8F7 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL100N8F7 PSpice Model      
Ersa Spice Model Tutorial for Power MOSFETS       STL100N8F7 Datasheet      

Shopping Guide

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