STMicroelectronics_STW34NM60N

STMicroelectronics
STW34NM60N  
Single FETs, MOSFETs

STMicroelectronics
STW34NM60N
278-STW34NM60N
Ersa
STMicroelectronics-STW34NM60N-datasheets-7808965.pdf
MOSFET N-CH 600V 29A TO247-3
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STW34NM60N Description

STW34NM60N Description

The STW34NM60N is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 600V, this device is capable of withstanding high voltages while maintaining low on-resistance, ensuring efficient power delivery. The STW34NM60N operates within a continuous drain current (Id) of 29A at 25°C, making it suitable for high-current applications.

STW34NM60N Features

  • High Voltage Tolerance: The STW34NM60N can handle drain-to-source voltages up to 600V, making it ideal for high-voltage applications.
  • Low On-Resistance: With a maximum Rds(on) of 105mOhm at 14.5A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Current Handling: Capable of handling continuous drain currents up to 29A at 25°C, the STW34NM60N is designed for high-current applications.
  • Low Gate Charge: A maximum gate charge (Qg) of 80nC at 10V ensures fast switching and reduced power loss.
  • Wide Operating Temperature: The STW34NM60N operates within a junction temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
  • Compliance and Safety: This device is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1, ensuring compliance with environmental and safety standards.

STW34NM60N Applications

The STW34NM60N is ideal for applications that require high voltage and current handling, such as:

  • Power Supplies: Due to its high voltage and current ratings, the STW34NM60N is well-suited for power supply designs.
  • Industrial Control: Its robust performance makes it suitable for industrial control systems that demand high reliability and efficiency.
  • Automotive Electronics: The STW34NM60N can be used in automotive applications where high voltage and current are required, such as electric vehicle chargers and power management systems.
  • Renewable Energy Systems: In solar inverters and wind turbine power electronics, the STW34NM60N's high voltage and current capabilities are essential.

Conclusion of STW34NM60N

The STW34NM60N from STMicroelectronics is a powerful N-Channel MOSFET designed for high-voltage and high-current applications. Its unique combination of high voltage tolerance, low on-resistance, and robust current handling makes it an excellent choice for power supplies, industrial control systems, automotive electronics, and renewable energy systems. With its compliance with environmental and safety standards, the STW34NM60N is a reliable and efficient solution for demanding power electronic applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW34NM60N Documents

Download datasheets and manufacturer documentation for STW34NM60N

Ersa STW34NM60N      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW34NM60N View All Specifications      
Ersa STW34NM60N      

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