STMicroelectronics

STB28NM60ND  

Single FETs, MOSFETs

STB28NM60ND Description

The STB28NM60ND from STMicroelectronics is a high-performance N-channel 600V power MOSFET designed for demanding switching applications. Part of the FDmesh™ II series, it combines low on-resistance (150mOhm @ 11.5A, 10V) with high current handling (23A continuous drain current @ 25°C) and robust thermal performance (190W max power dissipation). Its 600V drain-to-source voltage (Vdss) rating makes it suitable for high-voltage circuits, while the advanced MOSFET (Metal Oxide) technology ensures efficient power management. Although marked as "Not For New Designs", it remains a reliable choice for existing applications requiring high efficiency and durability.

STB28NM60ND Features

• Low Gate Charge (Qg): 62.5 nC @ 10V minimizes switching losses, enhancing efficiency in high-frequency applications.
• Fast Switching: Optimized input capacitance (2090 pF @ 100V) ensures rapid turn-on/off.
• High Voltage Tolerance: ±25V max Vgs and 600V Vdss provide robustness in harsh environments.
• Thermal Stability: 150°C max junction temperature (TJ) and MSL 1 (Unlimited) moisture sensitivity ensure reliability.
• Surface-Mount D2PAK Package: Compact and suitable for automated assembly (Tape & Reel packaging).
• Compliance: ROHS3 and REACH Unaffected, meeting environmental standards.

STB28NM60ND Applications

• Switching Power Supplies: Efficient energy conversion in AC-DC and DC-DC converters.
• Motor Drives: High-current handling for industrial and automotive motor control.
• Lighting Systems: Ideal for LED drivers and ballasts due to low Rds(on).
• Renewable Energy: Solar inverters and wind power systems benefit from its high-voltage capability.
• Industrial Equipment: Reliable performance in welding machines and UPS systems.

Conclusion of STB28NM60ND

The STB28NM60ND excels in high-voltage, high-efficiency applications, offering a balance of low conduction losses, fast switching, and thermal resilience. While newer alternatives may exist, its proven FDmesh™ II technology and D2PAK packaging make it a dependable choice for legacy designs or systems requiring rugged performance. Engineers valuing low Rds(on), high current capacity, and compliance with environmental standards will find this MOSFET a robust solution.

STB28NM60ND Documents

Download datasheets and manufacturer documentation for STB28NM60ND

Datasheets :

ST(B,F,P,W)28NM60ND Datasheet      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014