STMicroelectronics_STF2HNK60Z

STMicroelectronics
STF2HNK60Z  
Single FETs, MOSFETs

STMicroelectronics
STF2HNK60Z
278-STF2HNK60Z
Ersa
STMicroelectronics-STF2HNK60Z-datasheets-8040054.pdf
MOSFET N-CH 600V 2A TO220FP
In Stock : 3407

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STF2HNK60Z Description

STF2HNK60Z Description

The STF2HNK60Z is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in a variety of applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2A at 25°C, this MOSFET is well-suited for high-voltage, high-current applications. The device features a low on-resistance (Rds On) of 4.8Ω at 1A and 10V, ensuring efficient power dissipation and minimal power loss. The STF2HNK60Z is housed in a through-hole TO220FP package, making it ideal for applications requiring robust mechanical support and heat dissipation.

STF2HNK60Z Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltages, making it suitable for applications such as power supplies and motor drives.
  • 2A Continuous Drain Current (Id) @ 25°C: Delivers high current capabilities, ideal for demanding applications.
  • Low On-Resistance (Rds On): At 4.8Ω at 1A and 10V, this MOSFET minimizes power loss and maximizes efficiency.
  • SuperMESH™ Series: Part of STMicroelectronics' high-performance MOSFET series, offering superior electrical characteristics.
  • Through-Hole TO220FP Package: Provides robust mechanical support and excellent heat dissipation, crucial for high-power applications.

STF2HNK60Z Applications

The STF2HNK60Z is ideal for a wide range of applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, this MOSFET is well-suited for power supply designs.
  2. Motor Drives: The combination of high voltage and current capabilities makes it an excellent choice for motor drive applications.
  3. Industrial Control Systems: Reliable performance and robust packaging make it suitable for demanding industrial control systems.
  4. Automotive Applications: The STF2HNK60Z can be used in various automotive applications, such as electric power steering and battery management systems.

Conclusion of STF2HNK60Z

The STF2HNK60Z from STMicroelectronics is a powerful N-channel MOSFET that offers a combination of high voltage, high current, and low on-resistance, making it an excellent choice for a variety of high-performance applications. Its robust packaging and superior electrical characteristics set it apart from similar models, making it an ideal solution for power supplies, motor drives, industrial control systems, and automotive applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STF2HNK60Z Documents

Download datasheets and manufacturer documentation for STF2HNK60Z

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