STMicroelectronics_STD8N60DM2

STMicroelectronics
STD8N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STD8N60DM2
278-STD8N60DM2
Ersa
STMicroelectronics-STD8N60DM2-datasheets-10818149.pdf
MOSFET N-CH 600V 8A DPAK
In Stock : 2008

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    STD8N60DM2 Description

    STMicroelectronics' STD8N60DM2 is a high-performance, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of power electronic applications. Here's a detailed description of the model, its features, and potential applications:

    Description:

    The STD8N60DM2 is a discrete power MOSFET with a drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 8.5A (Tc=25°C). It is manufactured using ST's advanced trench technology, which provides excellent electrical characteristics and thermal performance.

    Features:

    1. High Blocking Voltage: The device can withstand high voltages up to 600V, making it suitable for various high-voltage applications.
    2. Low On-State Resistance (RDS(on)): The STD8N60DM2 has a low on-state resistance, which minimizes power dissipation and improves efficiency during operation.
    3. High-Speed Switching: The MOSFET is designed for fast switching, reducing switching losses and enabling high-frequency applications.
    4. Robustness: The device features a rugged construction that can withstand high-energy pulses and over-voltage transients.
    5. Thermal Performance: The trench technology used in the manufacturing process ensures excellent thermal performance, allowing for efficient heat dissipation.
    6. Built-in Protection: The STD8N60DM2 includes built-in protection features such as a drain-to-source diode for improved reliability and performance.
    7. Low Gate Charge: The device has a low gate charge, which reduces the energy required for gate control and improves overall efficiency.

    Applications:

    1. Motor Drives: The STD8N60DM2 is suitable for use in motor control applications, such as in industrial machinery, automotive systems, and HVAC systems.
    2. Power Supplies: The MOSFET can be used in various power supply applications, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Automotive Applications: The device is suitable for automotive applications, such as electric power steering (EPS) systems, battery management systems, and charging systems.
    4. Industrial Control: The STD8N60DM2 can be used in industrial control systems, such as servo drives, welding machines, and conveyor systems.
    5. Renewable Energy Systems: The MOSFET is suitable for use in renewable energy systems, such as solar inverters and wind turbine converters.
    6. Battery Protection: The device can be used in battery protection circuits to prevent overcharging and over-discharging of batteries.
    7. Telecommunications: The STD8N60DM2 can be used in telecommunications equipment for power management and signal processing applications.

    In summary, the STD8N60DM2 is a versatile, high-performance MOSFET from STMicroelectronics that offers excellent electrical characteristics, robustness, and thermal performance. It is suitable for a wide range of power electronic applications, including motor drives, power supplies, automotive systems, industrial control, renewable energy systems, battery protection, and telecommunications.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD8N60DM2 Documents

    Download datasheets and manufacturer documentation for STD8N60DM2

    Ersa Assembly Site 22/Dec/2022      
    Ersa STD8N60DM2 Datasheet      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Reel Design Change 22/Aug/2022      
    Ersa STD8N60DM2 Datasheet      

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