STMicroelectronics_STS5P3LLH6

STMicroelectronics
STS5P3LLH6  
Single FETs, MOSFETs

STMicroelectronics
STS5P3LLH6
278-STS5P3LLH6
Ersa
STMicroelectronics-STS5P3LLH6-datasheets-5084100.pdf
MOSFET P-CH 30V 5A 8SO
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    STS5P3LLH6 Description

    STS5P3LLH6 Description

    The STS5P3LLH6 is a high-performance MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from STMicroelectronics, designed for applications requiring high efficiency and reliability. With a P-CH 30V, 5A rating, this 8SO packaged device is part of the DeepGATE™, STripFET™ H6 series, offering superior performance in a compact form factor.

    STS5P3LLH6 Features

    • Technical Specifications: The STS5P3LLH6 boasts an impressive set of technical specifications, including an input capacitance (Ciss) of 639 pF @ 25 V, gate charge (Qg) of 6 nC @ 4.5 V, and a drain to source voltage (Vdss) of 30 V. It operates within a power dissipation range of up to 2.7W (Ta) and has a maximum gate-source voltage (Vgs) of ±20V.
    • Performance Benefits: This MOSFET is designed for high efficiency and low power consumption, with a low Rds On of 56mOhm @ 2.5A, 10V and a threshold voltage (Vgs(th)) of 2.5V @ 250µA. Its surface mount technology allows for easy integration into compact designs.
    • Compliance and Environmental: The STS5P3LLH6 is REACH unaffected and RoHS3 compliant, ensuring environmental responsibility and regulatory compliance. It also has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before baking is required.
    • Operating Conditions: With an operating temperature range of up to 150°C (TJ), this MOSFET is suitable for high-temperature applications.

    STS5P3LLH6 Applications

    The STS5P3LLH6 is ideal for a variety of applications where high efficiency, low power consumption, and compact design are critical. Some specific use cases include:

    • Automotive Electronics: Due to its high temperature tolerance and robust performance, it is well-suited for automotive applications such as engine control units and power management systems.
    • Industrial Control Systems: Its low Rds On and high current handling make it an excellent choice for power switching in industrial control systems.
    • Consumer Electronics: In consumer electronics, the STS5P3LLH6 can be used in power supplies and battery management systems, where efficiency and compact design are paramount.

    Conclusion of STS5P3LLH6

    The STS5P3LLH6 from STMicroelectronics stands out for its combination of high efficiency, low power consumption, and robust performance in a compact 8SO package. Its unique features, such as low Rds On and high temperature operation, make it an excellent choice for a wide range of applications, from automotive to industrial control systems. With its compliance with environmental regulations and high reliability, the STS5P3LLH6 is a trusted component for demanding electronic designs.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STS5P3LLH6 Documents

    Download datasheets and manufacturer documentation for STS5P3LLH6

    Ersa STS5P3LLH6      
    Ersa STS5P3LLH6      

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