The STS5P3LLH6 is a high-performance MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from STMicroelectronics, designed for applications requiring high efficiency and reliability. With a P-CH 30V, 5A rating, this 8SO packaged device is part of the DeepGATE™, STripFET™ H6 series, offering superior performance in a compact form factor.
STS5P3LLH6 Features
Technical Specifications: The STS5P3LLH6 boasts an impressive set of technical specifications, including an input capacitance (Ciss) of 639 pF @ 25 V, gate charge (Qg) of 6 nC @ 4.5 V, and a drain to source voltage (Vdss) of 30 V. It operates within a power dissipation range of up to 2.7W (Ta) and has a maximum gate-source voltage (Vgs) of ±20V.
Performance Benefits: This MOSFET is designed for high efficiency and low power consumption, with a low Rds On of 56mOhm @ 2.5A, 10V and a threshold voltage (Vgs(th)) of 2.5V @ 250µA. Its surface mount technology allows for easy integration into compact designs.
Compliance and Environmental: The STS5P3LLH6 is REACH unaffected and RoHS3 compliant, ensuring environmental responsibility and regulatory compliance. It also has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before baking is required.
Operating Conditions: With an operating temperature range of up to 150°C (TJ), this MOSFET is suitable for high-temperature applications.
STS5P3LLH6 Applications
The STS5P3LLH6 is ideal for a variety of applications where high efficiency, low power consumption, and compact design are critical. Some specific use cases include:
Automotive Electronics: Due to its high temperature tolerance and robust performance, it is well-suited for automotive applications such as engine control units and power management systems.
Industrial Control Systems: Its low Rds On and high current handling make it an excellent choice for power switching in industrial control systems.
Consumer Electronics: In consumer electronics, the STS5P3LLH6 can be used in power supplies and battery management systems, where efficiency and compact design are paramount.
Conclusion of STS5P3LLH6
The STS5P3LLH6 from STMicroelectronics stands out for its combination of high efficiency, low power consumption, and robust performance in a compact 8SO package. Its unique features, such as low Rds On and high temperature operation, make it an excellent choice for a wide range of applications, from automotive to industrial control systems. With its compliance with environmental regulations and high reliability, the STS5P3LLH6 is a trusted component for demanding electronic designs.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STS5P3LLH6 Documents
Download datasheets and manufacturer documentation for STS5P3LLH6
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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