STMicroelectronics_STB30N65DM6AG

STMicroelectronics
STB30N65DM6AG  
Single FETs, MOSFETs

STMicroelectronics
STB30N65DM6AG
278-STB30N65DM6AG
Ersa
STMicroelectronics-STB30N65DM6AG-datasheets-2697651.pdf
AUTOMOTIVE-GRADE N-CHANNEL 650 V
In Stock : 952

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STB30N65DM6AG Description

STB30N65DM6AG Description

The STB30N65DM6AG from STMicroelectronics is an automotive-grade N-channel 650V MOSFET designed for high-efficiency power switching applications. Built using MDmesh™ DM2 technology, it delivers low on-resistance (115mΩ @ 10A, 10V) and high current handling (28A continuous drain current @ 25°C), making it ideal for demanding environments. With a gate charge (Qg) of 46nC @ 10V and input capacitance (Ciss) of 2000pF @ 100V, it ensures fast switching performance while minimizing losses. The device is RoHS3 compliant, REACH unaffected, and rated for automotive applications, ensuring reliability under stringent conditions.

STB30N65DM6AG Features

  • 650V Drain-Source Voltage (Vdss): Suitable for high-voltage applications.
  • Low Rds(on) (115mΩ @ 10V): Reduces conduction losses for improved efficiency.
  • High Power Dissipation (223W, Tc): Robust thermal performance.
  • Automotive-Grade Compliance: Meets stringent automotive reliability standards.
  • MDmesh™ DM2 Technology: Optimized for low switching losses and high dv/dt capability.
  • ±25V Gate-Source Voltage (Vgs): Enhanced gate drive flexibility.
  • Surface Mount Packaging (Tape & Reel): Facilitates automated assembly.

STB30N65DM6AG Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC and DC-DC converters.
  • Motor Drives & Inverters: Ideal for automotive and industrial motor control.
  • Solar Inverters & UPS Systems: High-voltage switching with minimal losses.
  • LED Lighting Drivers: Efficient power management in high-brightness applications.
  • Electric Vehicle (EV) Charging Systems: Reliable performance in high-power environments.

Conclusion of STB30N65DM6AG

The STB30N65DM6AG stands out as a high-performance, automotive-grade MOSFET with low Rds(on), fast switching, and robust thermal characteristics. Its MDmesh™ DM2 technology and 650V rating make it a superior choice for power electronics in automotive, industrial, and renewable energy systems. Whether used in SMPS, motor drives, or EV charging, this MOSFET delivers efficiency, reliability, and compliance with industry standards, making it a top-tier solution for modern power designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
ECCN (EU)
RoHs compliant

STB30N65DM6AG Documents

Download datasheets and manufacturer documentation for STB30N65DM6AG

Ersa Product Change Notification 2024-03-05 (PDF)       Product Change Notification (PDF)      

Shopping Guide

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