The STB30N65DM6AG from STMicroelectronics is an automotive-grade N-channel 650V MOSFET designed for high-efficiency power switching applications. Built using MDmesh™ DM2 technology, it delivers low on-resistance (115mΩ @ 10A, 10V) and high current handling (28A continuous drain current @ 25°C), making it ideal for demanding environments. With a gate charge (Qg) of 46nC @ 10V and input capacitance (Ciss) of 2000pF @ 100V, it ensures fast switching performance while minimizing losses. The device is RoHS3 compliant, REACH unaffected, and rated for automotive applications, ensuring reliability under stringent conditions.
The STB30N65DM6AG stands out as a high-performance, automotive-grade MOSFET with low Rds(on), fast switching, and robust thermal characteristics. Its MDmesh™ DM2 technology and 650V rating make it a superior choice for power electronics in automotive, industrial, and renewable energy systems. Whether used in SMPS, motor drives, or EV charging, this MOSFET delivers efficiency, reliability, and compliance with industry standards, making it a top-tier solution for modern power designs.
Download datasheets and manufacturer documentation for STB30N65DM6AG