The STP80NF10 from STMicroelectronics is an N-channel 100V, 80A power MOSFET housed in a TO-220AB package, designed for high-efficiency power switching applications. Part of the STripFET™ II series, it leverages advanced Metal Oxide Semiconductor (MOSFET) technology to deliver low on-resistance (15mΩ @ 40A, 10V) and high power dissipation (300W (Tc). With a gate charge (Qg) of 182nC @ 10V and an input capacitance (Ciss) of 5500pF @ 25V, it ensures fast switching performance while minimizing conduction losses. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (Unlimited) moisture sensitivity, making it suitable for industrial and automotive environments.
STP80NF10 Features
Low Rds(On):15mΩ (max) at 40A, 10V, reducing conduction losses.
High Current Handling:80A continuous drain current (@ 25°C) for robust power delivery.
Fast Switching: Optimized gate charge (182nC @ 10V) and capacitance for efficient high-frequency operation.
Thermal Performance:300W max power dissipation (Tc) ensures reliability under heavy loads.
Wide Vgs Range:±20V gate-to-source voltage tolerance for flexible drive compatibility.
Durability:TO-220AB package offers mechanical strength and heat dissipation.
Compliance:ROHS3, REACH, and EAR99 certified for global use.
STP80NF10 Applications
Power Supplies: High-efficiency DC-DC converters, SMPS, and voltage regulators.
Motor Control: Ideal for H-bridge and brushless DC (BLDC) motor drives.
Automotive Systems: Used in ECUs, LED drivers, and battery management.
Industrial Equipment:Inverters, UPS systems, and solenoid drivers.
Energy Management:Solar inverters and power distribution systems.
Conclusion of STP80NF10
The STP80NF10 stands out for its low Rds(On), high current capability, and thermal efficiency, making it a top choice for demanding power electronics. Its STripFET™ II technology ensures superior switching performance, while the TO-220AB package provides ruggedness for harsh environments. Whether in industrial automation, automotive, or renewable energy, this MOSFET delivers reliability and performance, backed by STMicroelectronics' quality assurance.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP80NF10 Documents
Download datasheets and manufacturer documentation for STP80NF10
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Shipping Rate
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