STMicroelectronics

STW19NM50N  

Single FETs, MOSFETs

STW19NM50N Description

The STW19NM50N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 500V drain-to-source voltage (Vdss) and 14A continuous drain current (Id), it delivers robust switching performance in high-voltage circuits. Part of the MDmesh™ II series, it leverages advanced metal oxide semiconductor (MOSFET) technology to achieve low conduction losses and high efficiency. The device operates within a wide temperature range of up to 150°C (TJ) and features a low on-resistance (Rds(on)) of 250mΩ at 7A, 10V, ensuring minimal power dissipation. Packaged in a TO-247-3 through-hole format, it is suitable for high-power designs requiring reliable thermal management.

STW19NM50N Features

• High Voltage Rating: 500V Vdss for industrial and automotive applications.
• Low Gate Charge (Qg): 34nC @ 10V reduces switching losses, improving efficiency.
• Low Input Capacitance (Ciss): 1000pF @ 50V enables faster switching speeds.
• Optimized Rds(on): 250mΩ @ 7A, 10V minimizes conduction losses.
• Robust Thermal Performance: 110W (Tc) power dissipation ensures reliability under high loads.
• Wide Vgs Range: ±25V gate drive compatibility for flexible design integration.
• MDmesh™ II Technology: Enhances avalanche ruggedness and reduces switching noise.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99 for global market suitability.

STW19NM50N Applications

• Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC and DC-DC converters.
• Motor Drives: Industrial and automotive motor control systems.
• Inverters: Solar microinverters and UPS systems.
• Lighting: High-power LED drivers and ballasts.
• Industrial Automation: High-voltage switching in PLCs and robotics.

Conclusion of STW19NM50N

The STW19NM50N stands out as a high-reliability 500V MOSFET with low Rds(on) and fast switching, making it ideal for energy-efficient power conversion. Its MDmesh™ II technology ensures superior performance in high-frequency, high-voltage applications, while its TO-247-3 package facilitates effective heat dissipation. Whether used in SMPS, motor drives, or inverters, this MOSFET offers a balance of efficiency, ruggedness, and thermal stability, making it a preferred choice for engineers designing next-generation power systems.

STW19NM50N Documents

Download datasheets and manufacturer documentation for STW19NM50N

PCN Assembly/Origin :

IPG/14/8475 16/May/2014      

Datasheets :

STx19NM50N      

PCN Packaging :

Standard outer labelling 15/Nov/2023      

Other Related Documents :

STW19NM50N View All Specifications      

HTML Datasheet :

STx19NM50N