STMicroelectronics_STW45N65M5

STMicroelectronics
STW45N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW45N65M5
278-STW45N65M5
Ersa
STMicroelectronics-STW45N65M5-datasheets-12536461.pdf
MOSFET N-CH 650V 35A TO247
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STW45N65M5 Description

STW45N65M5 Description

The STW45N65M5 is a powerful MOSFET (Metal Oxide) device manufactured by STMicroelectronics, designed for high-performance applications. This N-Channel device offers a drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 35A at 25°C. With a maximum power dissipation of 210W and an operating temperature of 150°C, the STW45N65M5 is ideal for demanding applications.

STW45N65M5 Features

  • High Voltage and Current Handling: The STW45N65M5 can handle a drain-to-source voltage of 650V and a continuous drain current of 35A, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds(on) of just 78mOhm at 19.5A and 10V, the STW45N65M5 offers low power dissipation and high efficiency.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 5V at 250µA, ensuring reliable operation.
  • Low Input Capacitance: The STW45N65M5 has a maximum input capacitance (Ciss) of 3375pF at 100V, reducing switching losses and improving efficiency.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
  • Moisture Sensitivity Level (MSL) 1: The STW45N65M5 has an MSL of 1, indicating unlimited storage time before reflow soldering, simplifying logistics and inventory management.

STW45N65M5 Applications

The STW45N65M5 is ideal for a wide range of applications, including:

  • Industrial Motor Control: The high voltage and current ratings make it suitable for motor drives and control systems.
  • Power Supplies: The low on-resistance and high voltage capabilities make it an excellent choice for power supply designs.
  • Automotive Applications: The device's robustness and temperature range make it suitable for automotive electronics, such as electric vehicle charging systems and power management.
  • Renewable Energy Systems: The STW45N65M5 can be used in solar inverters and wind turbine power electronics, thanks to its high voltage and current ratings.

Conclusion of STW45N65M5

The STW45N65M5 from STMicroelectronics is a high-performance MOSFET designed for demanding applications requiring high voltage and current handling. Its low on-resistance, robust gate drive, and environmental compliance make it an excellent choice for industrial motor control, power supplies, automotive electronics, and renewable energy systems. With its unique features and advantages, the STW45N65M5 stands out among similar models, offering a reliable and efficient solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW45N65M5 Documents

Download datasheets and manufacturer documentation for STW45N65M5

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STW(A)45N65M5, STFW45N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW45N65M5 View All Specifications      
Ersa STW(A)45N65M5, STFW45N65M5      

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