STMicroelectronics

STD10LN80K5

STD10LN80K5 Description

The STD10LN80K5 from STMicroelectronics is an N-channel 800V MOSFET belonging to the MDmesh™ K5 series, optimized for high-efficiency power conversion applications. With a continuous drain current (Id) of 8A (Tc) and a low on-resistance (Rds(on)) of 630mΩ @ 4A, 10V, this device minimizes conduction losses, making it ideal for high-voltage switching. The 800V drain-to-source voltage (Vdss) rating ensures robust performance in demanding environments, while the ±30V gate-source voltage (Vgs) tolerance enhances reliability. Packaged in a DPAK (TO-252) surface-mount format with Tape & Reel (TR) packaging, it suits automated assembly processes.

STD10LN80K5 Features

• High Voltage & Efficiency: 800V Vdss with MDmesh™ K5 technology for reduced switching losses.
• Low Gate Charge (Qg): 15nC @ 10V ensures fast switching and lower drive losses.
• Optimized Rds(on): 630mΩ @ 4A, 10V improves thermal performance.
• Wide Vgs Range: ±30V enhances flexibility in gate drive design.
• Robust Packaging: DPAK (TO-252) offers high power dissipation (110W (Tc)) and mechanical durability.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for environmental and reliability assurance.

STD10LN80K5 Applications

• Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
• Industrial Power Systems: Motor drives, inverters, and UPS solutions.
• Lighting: LED drivers and ballast control circuits.
• Renewable Energy: Solar inverters and energy storage systems.
• Automotive Auxiliary Systems: EV charging and auxiliary power modules (where applicable).

Conclusion of STD10LN80K5

The STD10LN80K5 combines high-voltage capability, low conduction losses, and fast switching—making it a superior choice for power electronics designers. Its MDmesh™ K5 technology ensures efficiency in hard-switching topologies, while the DPAK package balances thermal performance and space constraints. Ideal for industrial, automotive, and renewable energy applications, this MOSFET delivers reliability and performance in demanding high-voltage environments.