STMicroelectronics_STP10N95K5

STMicroelectronics
STP10N95K5  
Single FETs, MOSFETs

STMicroelectronics
STP10N95K5
278-STP10N95K5
Ersa
STMicroelectronics-STP10N95K5-datasheets-441018.pdf
MOSFET N-CH 950V 8A TO220
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STP10N95K5 Description

STP10N95K5 Description

The STP10N95K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and high voltage tolerance. With a drain-to-source voltage (Vdss) of 950V and a continuous drain current (Id) of 8A at 25°C, this N-channel device is well-suited for demanding power electronics applications. Its low on-resistance (Rds On) of 800mOhm at 4A and 10V, along with a maximum gate-source voltage (Vgs) of ±30V, ensures efficient operation and control. The STP10N95K5 is mounted through-hole and packaged in a tube, making it easy to integrate into various designs.

STP10N95K5 Features

  • High Voltage Tolerance: The STP10N95K5 can handle a drain-to-source voltage of up to 950V, making it ideal for high-voltage applications.
  • Low On-Resistance: With an Rds On of just 800mOhm at 4A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Current Handling: Capable of handling a continuous drain current of 8A at 25°C, the STP10N95K5 is suitable for applications requiring high current.
  • Wide Gate Voltage Range: The maximum gate-source voltage of ±30V allows for flexible control of the device.
  • Low Gate Charge: A maximum gate charge (Qg) of 22nC at 10V contributes to the device's high-speed switching capabilities.
  • High Power Dissipation: The STP10N95K5 can dissipate up to 130W, making it suitable for power-intensive applications.
  • Compliance: This device is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring regulatory compliance for various markets.

STP10N95K5 Applications

The STP10N95K5 is ideal for a variety of high-voltage and high-current applications, including:

  • Power Supplies: Its high voltage and current ratings make it suitable for power supply designs.
  • Motor Controls: The device's robust performance is well-suited for motor control applications, where high voltage and current handling are required.
  • Industrial Automation: The STP10N95K5 can be used in industrial automation systems that demand high reliability and performance.
  • Automotive Electronics: This MOSFET is suitable for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of STP10N95K5

The STP10N95K5 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its unique combination of high voltage tolerance, low on-resistance, and robust current handling make it an excellent choice for power electronics, motor controls, industrial automation, and automotive electronics. With its compliance with various regulations and its high power dissipation capabilities, the STP10N95K5 is a reliable and efficient solution for demanding applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP10N95K5 Documents

Download datasheets and manufacturer documentation for STP10N95K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa ST(B,F,P,W)10N95K5      
Ersa ST(B,F,P,W)10N95K5      

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