STMicroelectronics_STF100N6F7

STMicroelectronics
STF100N6F7  
Single FETs, MOSFETs

STMicroelectronics
STF100N6F7
278-STF100N6F7
Ersa
STMicroelectronics-STF100N6F7-datasheets-9341500.pdf
MOSFET N-CH 60V 46A TO220FP
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STF100N6F7 Description

STF100N6F7 Description

The STF100N6F7 from STMicroelectronics is a high-performance N-channel MOSFET designed for power management applications. It features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 46A (Tc), making it suitable for high-current switching. Part of the STripFET™ F7 series, this MOSFET leverages advanced Metal Oxide (MOSFET) technology to deliver low on-resistance (Rds(on) of 5.6mΩ @ 23A, 10V) and high efficiency. Packaged in a TO220FP through-hole format, it ensures robust thermal performance with a maximum power dissipation of 25W (Tc).

STF100N6F7 Features

  • Low Rds(on): 5.6mΩ @ 23A, 10V minimizes conduction losses, improving efficiency.
  • High Current Handling: 46A continuous drain current (Tc) supports demanding power applications.
  • Fast Switching: Low gate charge (Qg) of 30nC @ 10V and input capacitance (Ciss) of 1980pF @ 25V ensure rapid switching performance.
  • Wide Vgs Range: ±20V gate-source voltage (Vgs) enhances flexibility in drive circuitry.
  • Robust Construction: TO220FP package offers excellent thermal dissipation and mechanical durability.
  • Compliance: ROHS3 compliant, REACH unaffected, and ECCN EAR99 for global regulatory adherence.

STF100N6F7 Applications

The STF100N6F7 excels in high-efficiency power conversion and switching applications, including:

  • DC-DC Converters & SMPS: Low Rds(on) reduces energy loss in power supplies.
  • Motor Control & Drives: High current capability supports brushed/brushless motor drivers.
  • Automotive Systems: Suitable for LED drivers, battery management, and load switches in 12V/24V systems.
  • Industrial Power Modules: Ideal for solar inverters, UPS, and welding equipment due to its rugged design.

Conclusion of STF100N6F7

The STF100N6F7 stands out as a high-efficiency, low-loss MOSFET with superior thermal and electrical characteristics. Its low on-resistance, high current rating, and fast switching make it a top choice for power electronics designers. Whether in automotive, industrial, or consumer applications, this MOSFET delivers reliable performance and energy savings, backed by STMicroelectronics' proven STripFET™ F7 technology.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF100N6F7 Documents

Download datasheets and manufacturer documentation for STF100N6F7

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