The STF100N6F7 from STMicroelectronics is a high-performance N-channel MOSFET designed for power management applications. It features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 46A (Tc), making it suitable for high-current switching. Part of the STripFET™ F7 series, this MOSFET leverages advanced Metal Oxide (MOSFET) technology to deliver low on-resistance (Rds(on) of 5.6mΩ @ 23A, 10V) and high efficiency. Packaged in a TO220FP through-hole format, it ensures robust thermal performance with a maximum power dissipation of 25W (Tc).
The STF100N6F7 excels in high-efficiency power conversion and switching applications, including:
The STF100N6F7 stands out as a high-efficiency, low-loss MOSFET with superior thermal and electrical characteristics. Its low on-resistance, high current rating, and fast switching make it a top choice for power electronics designers. Whether in automotive, industrial, or consumer applications, this MOSFET delivers reliable performance and energy savings, backed by STMicroelectronics' proven STripFET™ F7 technology.
Download datasheets and manufacturer documentation for STF100N6F7