STMicroelectronics_STB18NF25

STMicroelectronics
STB18NF25  
Single FETs, MOSFETs

STMicroelectronics
STB18NF25
278-STB18NF25
Ersa
STMicroelectronics-STB18NF25-datasheets-3788176.pdf
MOSFET N-CH 250V 17A D2PAK
In Stock : 4231

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STB18NF25 Description

STB18NF25 Description

The STB18NF25 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. This device is part of the STripFET™ II series, offering superior performance and reliability. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 17A at 25°C, the STB18NF25 is capable of handling high-power applications. The device is available in a D2PAK package, making it suitable for surface-mount applications.

STB18NF25 Features

  • Technology: MOSFET (Metal Oxide) with advanced STripFET™ II technology for improved performance.
  • Input Capacitance (Ciss): Maximum 1000 pF at 25V, ensuring fast switching and reduced power consumption.
  • Gate Charge (Qg): Maximum 29.5 nC at 10V, contributing to lower switching losses.
  • Drain to Source Voltage (Vdss): 250V, suitable for high-voltage applications.
  • Power Dissipation (Max): 110W (Tc), enabling high-power operation.
  • Rds On (Max): 165mOhm at 8.5A, 10V, providing low on-resistance for efficient current flow.
  • Vgs(th) (Max): 4V at 250µA, ensuring reliable gate control.
  • Drive Voltage: Maximum 10V for Rds On, ensuring compatibility with various gate drivers.
  • Mounting Type: Surface Mount, suitable for compact designs.
  • Grade: Automotive, designed to meet the stringent requirements of automotive applications.
  • RoHS Status: ROHS3 Compliant, ensuring environmental compliance.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling.

STB18NF25 Applications

The STB18NF25 is ideal for a variety of high-power automotive applications, including:

  1. Power Management: In automotive power management systems, the STB18NF25 can efficiently handle high currents and voltages, ensuring reliable power distribution.
  2. Motor Control: The device's low on-resistance and high current capability make it suitable for motor control applications, such as electric power steering and electric braking systems.
  3. LED Lighting: In automotive LED lighting systems, the STB18NF25 can efficiently manage high currents, ensuring consistent and reliable illumination.
  4. Battery Management: The device can be used in battery management systems to regulate current flow and protect against overcharging and over-discharging.

Conclusion of STB18NF25

The STB18NF25 is a powerful and reliable N-Channel MOSFET from STMicroelectronics, designed for demanding automotive applications. Its advanced STripFET™ II technology, combined with its high voltage and current ratings, make it an ideal choice for power management, motor control, LED lighting, and battery management systems. With its automotive-grade design and compliance with environmental regulations, the STB18NF25 is a trusted solution for high-performance automotive electronics.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STB18NF25 Documents

Download datasheets and manufacturer documentation for STB18NF25

Ersa Mult Devices Testing 10/May/2018      
Ersa ST(B,D)18NF25      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB18NF25 View All Specifications      
Ersa ST(B,D)18NF25      
Ersa D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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