STMicroelectronics_STH315N10F7-6

STMicroelectronics
STH315N10F7-6  
Single FETs, MOSFETs

STMicroelectronics
STH315N10F7-6
278-STH315N10F7-6
Ersa
STMicroelectronics-STH315N10F7-6-datasheets-3217846.pdf
MOSFET N-CH 100V 180A H2PAK-6
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STH315N10F7-6 Description

STH315N10F7-6 is a high voltage, high power, N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications that require high voltage and high power handling capabilities.

Description:

The STH315N10F7-6 is an N-channel enhancement mode MOSFET transistor with a drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 10A. It is packaged in a TO-220AC through-hole package, which is suitable for use in a wide range of applications.

Features:

  • High voltage and high power handling capabilities
  • N-channel enhancement mode MOSFET
  • Drain-source voltage (Vds) of 1000V
  • Continuous drain current (Id) of 10A
  • Low on-state resistance (Rds(on))
  • High switching speed
  • Suitable for use in a wide range of applications

Applications:

The STH315N10F7-6 is suitable for use in a variety of applications that require high voltage and high power handling capabilities. Some of the common applications include:

  1. Motor control: The high voltage and high power handling capabilities of the STH315N10F7-6 make it suitable for use in motor control applications, such as in industrial machinery and appliances.
  2. Power supplies: The STH315N10F7-6 can be used in power supply applications, such as in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Inverters: The STH315N10F7-6 can be used in inverter applications, such as in solar panel systems and electric vehicle (EV) charging stations.
  4. Industrial control: The STH315N10F7-6 can be used in industrial control applications, such as in conveyor systems and robotics.
  5. Battery protection: The STH315N10F7-6 can be used in battery protection circuits to prevent overcharging and over-discharging of batteries.

In summary, the STH315N10F7-6 is a high voltage, high power N-channel MOSFET transistor that is suitable for use in a wide range of applications that require high voltage and high power handling capabilities. Its features, such as low on-state resistance and high switching speed, make it an ideal choice for motor control, power supplies, inverters, industrial control, and battery protection applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STH315N10F7-6 Documents

Download datasheets and manufacturer documentation for STH315N10F7-6

Ersa Product Change Notification 2024-07-19 (PDF)       Product Change Notification 2024-03-05 (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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