The STP42N60M2-EP from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 600V drain-to-source voltage (Vdss) and 34A continuous drain current (Id), it delivers robust switching performance in high-voltage circuits. Its low on-resistance (Rds(on)) of 87mΩ at 10V gate drive ensures minimal conduction losses, while the 250W power dissipation (Tc) rating supports high-power operation. The device operates reliably up to 150°C junction temperature (TJ), making it suitable for harsh environments. Packaged in a TO-220 through-hole format, it balances thermal management and ease of assembly.
The STP42N60M2-EP stands out for its high voltage tolerance, low conduction losses, and thermal resilience, making it ideal for power electronics where efficiency and reliability are critical. Its TO-220 package ensures compatibility with standard mounting processes, while its wide operating temperature range suits industrial and automotive applications. Engineers will appreciate its balance of performance, durability, and cost-effectiveness in high-power designs.
Download datasheets and manufacturer documentation for STP42N60M2-EP