STMicroelectronics_STP42N60M2-EP

STMicroelectronics
STP42N60M2-EP  
Single FETs, MOSFETs

STMicroelectronics
STP42N60M2-EP
278-STP42N60M2-EP
Ersa
STMicroelectronics-STP42N60M2-EP-datasheets-6062503.pdf
MOSFET N-CH 600V 34A TO220
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STP42N60M2-EP Description

STP42N60M2-EP Description

The STP42N60M2-EP from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 600V drain-to-source voltage (Vdss) and 34A continuous drain current (Id), it delivers robust switching performance in high-voltage circuits. Its low on-resistance (Rds(on)) of 87mΩ at 10V gate drive ensures minimal conduction losses, while the 250W power dissipation (Tc) rating supports high-power operation. The device operates reliably up to 150°C junction temperature (TJ), making it suitable for harsh environments. Packaged in a TO-220 through-hole format, it balances thermal management and ease of assembly.

STP42N60M2-EP Features

  • High Voltage & Current Handling: 600V Vdss and 34A Id for power-intensive designs.
  • Low Rds(on): 87mΩ @ 10V Vgs, reducing energy loss and improving efficiency.
  • Fast Switching: Optimized gate charge (Qg(max) = 55nC @ 10V) and input capacitance (Ciss = 2370pF @ 100V) for high-frequency applications.
  • Robust Thermal Performance: 250W max power dissipation and TO-220 package for effective heat dissipation.
  • Wide Gate Drive Range: Supports ±25V Vgs(max), enhancing flexibility in drive circuitry.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) moisture sensitivity.

STP42N60M2-EP Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency PFC, DC-DC converters, and inverters.
  • Motor Drives: Industrial and automotive motor control systems requiring high voltage/current handling.
  • Renewable Energy: Solar inverters and wind power converters.
  • Industrial Equipment: UPS systems, welding machines, and induction heating.
  • Lighting: High-power LED drivers and ballasts.

Conclusion of STP42N60M2-EP

The STP42N60M2-EP stands out for its high voltage tolerance, low conduction losses, and thermal resilience, making it ideal for power electronics where efficiency and reliability are critical. Its TO-220 package ensures compatibility with standard mounting processes, while its wide operating temperature range suits industrial and automotive applications. Engineers will appreciate its balance of performance, durability, and cost-effectiveness in high-power designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP42N60M2-EP Documents

Download datasheets and manufacturer documentation for STP42N60M2-EP

Ersa ST(B,P,W)42N60M2-EP      
Ersa ST(B,P,W)42N60M2-EP      

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