STMicroelectronics_STW25N60M2-EP

STMicroelectronics
STW25N60M2-EP  
Single FETs, MOSFETs

STMicroelectronics
STW25N60M2-EP
278-STW25N60M2-EP
Ersa
STMicroelectronics-STW25N60M2-EP-datasheets-9839210.pdf
MOSFET N-CHANNEL 600V 18A TO247
In Stock : 144

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ISO9001
Quality Policy
ISO45001
ISO14001

STW25N60M2-EP Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STW25N60M2-EP belongs to can be classified under the Discrete Semiconductors. STW25N60M2-EP is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STW25N60M2-EP provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Supplier Device Package
RoHS
Qg - Gate Charge
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Number of Channels
Technology
REACH Status
Mfr
Vgs (Max)
Maximum Operating Temperature
Rds On - Drain-Source Resistance
RoHS Status
Moisture Sensitivity Level (MSL)
Mounting Style
Operating Temperature
FET Feature
Vgs - Gate-Source Voltage
ECCN
Transistor Polarity
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Pd - Power Dissipation
USHTS
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STW25N60M2-EP Documents

Download datasheets and manufacturer documentation for STW25N60M2-EP

Ersa Standard outer labelling 15/Nov/2023      
Ersa Gate threshold voltage 10/Apr/2018      

Shopping Guide

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