The STP80N10F7 from STMicroelectronics is an N-channel power MOSFET designed for high-efficiency switching applications. Built on advanced DeepGATE™ and STripFET™ VII technology, it offers a robust 100V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 80A (Tc). With an ultra-low on-resistance (Rds(on)) of 10mΩ @ 40A, 10V, this MOSFET minimizes conduction losses, enhancing thermal performance. The device is housed in a TO-220 package, ensuring reliable power handling with a maximum power dissipation of 110W (Tc).
The STP80N10F7 is ideal for high-power switching applications, including:
The STP80N10F7 is a high-performance N-channel MOSFET offering low Rds(on), high current capability, and fast switching, making it ideal for power-intensive applications. Its STripFET™ VII technology and TO-220 package ensure reliability and thermal efficiency, while compliance with ROHS3 and REACH standards makes it environmentally friendly. Though marked as obsolete, it remains a viable choice for legacy designs requiring robust power handling and efficiency. Engineers can leverage its strengths in motor drives, converters, and inverters where low conduction losses and high durability are critical.
Download datasheets and manufacturer documentation for STP80N10F7