STMicroelectronics_STP80N10F7

STMicroelectronics
STP80N10F7  
Single FETs, MOSFETs

STMicroelectronics
STP80N10F7
278-STP80N10F7
Ersa
STMicroelectronics-STP80N10F7-datasheets-11476443.pdf
MOSFET N-CH 100V 80A TO220
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STP80N10F7 Description

STP80N10F7 Description

The STP80N10F7 from STMicroelectronics is an N-channel power MOSFET designed for high-efficiency switching applications. Built on advanced DeepGATE™ and STripFET™ VII technology, it offers a robust 100V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 80A (Tc). With an ultra-low on-resistance (Rds(on)) of 10mΩ @ 40A, 10V, this MOSFET minimizes conduction losses, enhancing thermal performance. The device is housed in a TO-220 package, ensuring reliable power handling with a maximum power dissipation of 110W (Tc).

STP80N10F7 Features

  • Low Rds(on): 10mΩ @ 40A, 10V ensures reduced power loss and improved efficiency.
  • High Current Capability: Supports 80A continuous drain current (Id) for demanding applications.
  • Optimized Gate Charge (Qg): 45nC @ 10V enables fast switching, reducing switching losses.
  • Wide Vgs Range: ±20V gate-source voltage tolerance enhances flexibility in drive circuits.
  • Advanced Technology: STripFET™ VII and DeepGATE™ design improve thermal and electrical performance.
  • Robust Packaging: TO-220 through-hole mounting ensures mechanical durability and efficient heat dissipation.
  • Compliance: ROHS3 and REACH compliant, meeting environmental standards.

STP80N10F7 Applications

The STP80N10F7 is ideal for high-power switching applications, including:

  • DC-DC Converters: Efficient power conversion in industrial and automotive systems.
  • Motor Control: Drives high-current motors in robotics, automation, and electric vehicles.
  • Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for servers and telecom equipment.
  • Battery Management Systems (BMS): Ensures low-loss switching in energy storage solutions.
  • Inverters: Suitable for solar inverters and UPS systems due to high voltage and current handling.

Conclusion of STP80N10F7

The STP80N10F7 is a high-performance N-channel MOSFET offering low Rds(on), high current capability, and fast switching, making it ideal for power-intensive applications. Its STripFET™ VII technology and TO-220 package ensure reliability and thermal efficiency, while compliance with ROHS3 and REACH standards makes it environmentally friendly. Though marked as obsolete, it remains a viable choice for legacy designs requiring robust power handling and efficiency. Engineers can leverage its strengths in motor drives, converters, and inverters where low conduction losses and high durability are critical.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STP80N10F7 Documents

Download datasheets and manufacturer documentation for STP80N10F7

Ersa STx80N10F7,STH80N10F7-2      
Ersa STx80N10F7,STH80N10F7-2      

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