STMicroelectronics_STH80N10F7-2

STMicroelectronics
STH80N10F7-2  
Single FETs, MOSFETs

STMicroelectronics
STH80N10F7-2
278-STH80N10F7-2
Ersa
STMicroelectronics-STH80N10F7-2-datasheets-12220803.pdf
MOSFET N-CH 100V 80A H2PAK-2
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STH80N10F7-2 Description

STH80N10F7-2 Description

The STH80N10F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and efficient switching. With a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C, this MOSFET is ideal for high-power applications. It features a low on-resistance (Rds On) of 9.5mOhm at 40A and 10V Vgs, ensuring minimal power loss during operation.

STH80N10F7-2 Features

  • High Power Dissipation: Capable of handling up to 110W of power dissipation at the junction temperature (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On of 9.5mOhm at 40A and 10V Vgs, the STH80N10F7-2 minimizes power loss and improves efficiency.
  • Robust Voltage Ratings: A drain to source voltage (Vdss) of 100V and a gate to source voltage (Vgs) of ±20V ensure reliable operation in various high-voltage applications.
  • Surface Mount Technology: The surface mount packaging allows for easy integration into modern electronic designs, reducing space requirements and improving thermal performance.
  • Compliance with Regulations: The STH80N10F7-2 is compliant with the REACH regulation and RoHS3 directive, ensuring environmental and health safety.

STH80N10F7-2 Applications

The STH80N10F7-2 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, it is suitable for use in power supply designs, particularly in switching power supplies.
  • Industrial Automation: Its robustness and high power dissipation make it suitable for motor control and other industrial automation applications.
  • Automotive Electronics: The STH80N10F7-2 can be used in automotive applications such as electric power steering and battery management systems.

Conclusion of STH80N10F7-2

The STH80N10F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high power dissipation, low on-resistance, and robust voltage ratings. Its surface mount packaging and compliance with environmental regulations make it an ideal choice for high-power applications in various industries. However, it is important to note that the product is currently listed as obsolete, which may affect its availability and long-term support.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STH80N10F7-2 Documents

Download datasheets and manufacturer documentation for STH80N10F7-2

Ersa STx80N10F7,STH80N10F7-2      
Ersa Mult Dev OBS 2/Apr/2020      
Ersa STx80N10F7,STH80N10F7-2      

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