STMicroelectronics_STH80N10F7-2
original

STMicroelectronics
STH80N10F7-2

278-STH80N10F7-2
PDF Datasheet
N-Ch MOSFET 100V 80A 9.5mR TO-263-3 Surface Mount

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
100V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
4.8mm
Show More

STH80N10F7-2 Description

STH80N10F7-2 Description

The STH80N10F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and efficient switching. With a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C, this MOSFET is ideal for high-power applications. It features a low on-resistance (Rds On) of 9.5mOhm at 40A and 10V Vgs, ensuring minimal power loss during operation.

STH80N10F7-2 Features

  • High Power Dissipation: Capable of handling up to 110W of power dissipation at the junction temperature (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On of 9.5mOhm at 40A and 10V Vgs, the STH80N10F7-2 minimizes power loss and improves efficiency.
  • Robust Voltage Ratings: A drain to source voltage (Vdss) of 100V and a gate to source voltage (Vgs) of ±20V ensure reliable operation in various high-voltage applications.
  • Surface Mount Technology: The surface mount packaging allows for easy integration into modern electronic designs, reducing space requirements and improving thermal performance.
  • Compliance with Regulations: The STH80N10F7-2 is compliant with the REACH regulation and RoHS3 directive, ensuring environmental and health safety.

STH80N10F7-2 Applications

The STH80N10F7-2 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, it is suitable for use in power supply designs, particularly in switching power supplies.
  • Industrial Automation: Its robustness and high power dissipation make it suitable for motor control and other industrial automation applications.
  • Automotive Electronics: The STH80N10F7-2 can be used in automotive applications such as electric power steering and battery management systems.

Conclusion of STH80N10F7-2

The STH80N10F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high power dissipation, low on-resistance, and robust voltage ratings. Its surface mount packaging and compliance with environmental regulations make it an ideal choice for high-power applications in various industries. However, it is important to note that the product is currently listed as obsolete, which may affect its availability and long-term support.

FAQ

Are there related or alternative parts for STH80N10F7-2?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the mounting type of STH80N10F7-2?
What is STH80N10F7-2?
Is STH80N10F7-2 currently in stock?
What package or case is STH80N10F7-2 available in?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ