The SCTWA50N120 is a high-performance Silicon Carbide Field-Effect Transistor (SiCFET) from STMicroelectronics, designed for demanding applications that require high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 65A at 25°C, this device is suitable for high-power electronics and industrial applications.
SCTWA50N120 Features
High Voltage and Current Ratings: The SCTWA50N120 boasts a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 65A at 25°C, making it ideal for high-power applications.
Low On-Resistance: With a maximum Rds(on) of 69mΩ at 40A and 20V, this device offers low power dissipation and high efficiency.
Silicon Carbide Technology: Utilizing SiCFET technology, the SCTWA50N120 provides improved thermal conductivity and faster switching speeds compared to traditional silicon-based MOSFETs.
Robust Package: The HiP247™ package ensures reliable performance and thermal management in high-power applications.
Compliance: The SCTWA50N120 is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, making it suitable for a wide range of applications.
SCTWA50N120 Applications
The SCTWA50N120 is ideal for various high-power applications, including:
Industrial Motor Drives: Its high voltage and current ratings make it suitable for motor control applications in industrial settings.
Power Supplies: The low on-resistance and high voltage capabilities make it an excellent choice for power supply designs.
Renewable Energy Systems: The SCTWA50N120 can be used in solar inverters and wind power systems, where high voltage and current ratings are critical.
Electric Vehicles: This device is suitable for high-voltage applications in electric vehicles, such as battery management systems and motor controllers.
Conclusion of SCTWA50N120
The SCTWA50N120 from STMicroelectronics is a powerful SiCFET that offers high voltage and current ratings, low on-resistance, and robust performance. Its unique features, such as Silicon Carbide technology and compliance with industry standards, make it an ideal choice for high-power applications in various industries. With its exceptional performance and reliability, the SCTWA50N120 is a valuable addition to any high-power electronics design.
Tech Specifications
Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Typical Gate Threshold Voltage (V)
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
Country of Origin
SCTWA50N120 Documents
Download datasheets and manufacturer documentation for SCTWA50N120
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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