STMicroelectronics_STP100N10F7

STMicroelectronics
STP100N10F7  
Single FETs, MOSFETs

STMicroelectronics
STP100N10F7
278-STP100N10F7
Ersa
STMicroelectronics-STP100N10F7-datasheets-9344761.pdf
MOSFET N CH 100V 80A TO-220
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STP100N10F7 Description

STP100N10F7 Description

The STP100N10F7 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This N-channel MOSFET features a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 80A at 25°C. With a maximum power dissipation of 150W, the STP100N10F7 is well-suited for demanding applications in the electronics industry.

STP100N10F7 Features

  • High Voltage and Current Ratings: The STP100N10F7 boasts a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 80A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds On of 8mOhm at 40A and 10V, the STP100N10F7 offers low on-resistance for efficient power dissipation.
  • Robust Gate Charge and Input Capacitance: The device features a maximum gate charge (Qg) of 61nC at 10V and an input capacitance (Ciss) of 4369pF at 50V, ensuring reliable operation and fast switching.
  • Wide Voltage Range: The STP100N10F7 operates with a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in various applications.
  • Compliance and Environmental Standards: The device is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious applications.
  • Mounting and Packaging: The STP100N10F7 is available in a through-hole mounting type and comes in a tube package, facilitating easy integration into various designs.

STP100N10F7 Applications

The STP100N10F7 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, the STP100N10F7 is well-suited for power electronics applications, such as power supplies, motor drives, and inverters.
  2. Industrial Control: The device's robust performance makes it suitable for industrial control applications, including motor control and industrial automation systems.
  3. Automotive: The STP100N10F7 can be used in automotive applications, such as electric vehicle chargers, power windows, and lighting systems.
  4. RF Power Amplifiers: The device's low on-resistance and fast switching capabilities make it suitable for RF power amplifiers in communication systems.

Conclusion of STP100N10F7

The STP100N10F7 from STMicroelectronics is a high-performance MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and robust gate charge and input capacitance. Its compliance with RoHS3 and REACH standards, along with its through-hole mounting type and tube packaging, make it an ideal choice for a wide range of applications in the electronics industry, including power electronics, industrial control, automotive, and RF power amplifiers.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP100N10F7 Documents

Download datasheets and manufacturer documentation for STP100N10F7

Ersa STx100N10F7 DataSheet      
Ersa STP100N10F7 View All Specifications      
Ersa STx100N10F7 DataSheet      

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