STMicroelectronics
STH315N10F7-2
Single FETs, MOSFETs
STH315N10F7-2
278-STH315N10F7-2
STMicroelectronics-STH315N10F7-2-datasheets-12161779.pdf
MOSFET N-CH 100V 180A H2PAK-2
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STH315N10F7-2 Description
STMicroelectronics' STH315N10F7-2 is a high-power, high-frequency MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications, including power electronics and motor control.
Description:
The STH315N10F7-2 is an N-channel MOSFET with a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 315A, and a gate-source voltage (Vgs) of ±20V. It is available in a TO-247AC package, which is suitable for high-power applications.
Features:
- High Power: The STH315N10F7-2 is designed for high-power applications, with a continuous drain current of 315A.
- High Frequency: The device is designed for high-frequency operation, making it suitable for use in switching power supplies and motor control applications.
- Low On-Resistance: The MOSFET has a low on-resistance (Rds(on)), which helps to minimize power dissipation and improve efficiency.
- Robustness: The device is designed to be robust and reliable, with built-in protection features such as over-voltage and over-current protection.
- Thermal Performance: The TO-247AC package provides good thermal performance, allowing for efficient heat dissipation in high-power applications.
Applications:
- Power Electronics: The STH315N10F7-2 is suitable for use in power electronics applications, such as switching power supplies and power converters.
- Motor Control: The device is also suitable for use in motor control applications, such as brushless DC motor controllers and AC motor drives.
- Renewable Energy: The MOSFET can be used in renewable energy applications, such as solar panel power conditioning systems and wind turbine converters.
- Electric Vehicles: The STH315N10F7-2 can be used in electric vehicle applications, such as battery management systems and electric motor controllers.
- Industrial Automation: The device can be used in industrial automation applications, such as servo motor drives and robotic control systems.
Overall, the STH315N10F7-2 is a high-power, high-frequency MOSFET that offers excellent performance and reliability for a wide range of applications in power electronics, motor control, renewable energy, electric vehicles, and industrial automation.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant
STH315N10F7-2 Documents
Download datasheets and manufacturer documentation for STH315N10F7-2
STy315 Wafer Chgs 10/Dec/2020 STH315N10F7-2,STH315N10F7-6 Mult Dev Inner Box Chg 9/Dec/2021 Related Parts
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