STMicroelectronics
STN1NF20  
Single FETs, MOSFETs

STMicroelectronics
STN1NF20
278-STN1NF20
Ersa
STMicroelectronics-STN1NF20-datasheets-12599127.pdf
MOSFET N-CH 200V 1A SOT-223
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    STN1NF20 Description

    STN1NF20 Description

    The STN1NF20 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications requiring efficient power management and control. This device features a robust 200V drain-to-source voltage rating, making it suitable for high-voltage applications. With a continuous drain current of 1A at 25°C, the STN1NF20 can handle significant power loads while maintaining low on-resistance for improved efficiency.

    STN1NF20 Features

    • Technology: Advanced MOSFET (Metal Oxide) technology ensures reliable operation and high performance.
    • Input Capacitance: Low input capacitance of 90 pF @ 25V minimizes power consumption and improves switching speed.
    • Gate Charge: A maximum gate charge of 5.7 nC @ 10V reduces switching losses and enhances efficiency.
    • Mounting Type: Surface mount design for easy integration into compact electronic devices.
    • RoHS Compliance: Compliant with ROHS3 standards, ensuring environmental sustainability.
    • REACH Status: REACH unaffected, adhering to strict European chemical regulations.
    • Moisture Sensitivity Level: MSL 1, allowing for unlimited storage time before reflow soldering.
    • Series: Part of the STripFET™ II series, known for its superior performance and reliability.

    STN1NF20 Applications

    The STN1NF20 is ideal for various applications where high voltage and current handling are required, combined with low power consumption and fast switching capabilities. Some specific use cases include:

    • Power Supplies: Efficiently manage power in switching power supplies and voltage regulators.
    • Motor Controls: Reliable control of electric motors in industrial and automotive applications.
    • Battery Management: Effectively manage battery charging and discharging in portable devices and electric vehicles.
    • Industrial Automation: Reliable operation in high-voltage control systems for industrial machinery.

    Conclusion of STN1NF20

    The STN1NF20 from STMicroelectronics stands out as a versatile and high-performance MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its compliance with environmental standards and robust design make it an excellent choice for a wide range of applications in power management and control systems. With its unique features and advantages, the STN1NF20 is a reliable solution for demanding electronic devices.

    Tech Specifications

    Configuration
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STN1NF20 Documents

    Download datasheets and manufacturer documentation for STN1NF20

    Ersa Carrier/Cover Tape Supplier 23/Sep/2021      
    Ersa STN1NF20      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STN1NF20 View All Specifications      
    Ersa STN1NF20      

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