STMicroelectronics_STD5N60M2
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STMicroelectronics
STD5N60M2

278-STD5N60M2
PDF Datasheet
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
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Tech Specifications

Package/Case
TO-252-3
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
211pF
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STD5N60M2 Description

STD5N60M2 Description

The STD5N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to provide superior performance in various electronic applications. This MOSFET is part of the MDmesh™ II Plus series and is manufactured using advanced MOSFET technology. With a drain-to-source voltage of 600V and a continuous drain current of 3.5A at 25°C, the STD5N60M2 is capable of handling high voltage and current requirements in various applications.

STD5N60M2 Features

  • High Drain-to-Source Voltage (Vdss): The STD5N60M2 can withstand a maximum drain-to-source voltage of 600V, making it suitable for high-voltage applications.
  • Low On-Resistance (Rds On): With a maximum on-resistance of 1.4Ω at 1.7A and 10V, the STD5N60M2 offers low power dissipation and high efficiency.
  • Low Gate Charge (Qg): The maximum gate charge is 8.5nC at 10V, which contributes to faster switching speeds and reduced power consumption.
  • High Input Capacitance (Ciss): The maximum input capacitance is 211pF at 100V, ensuring stable operation and minimal distortion in high-frequency applications.
  • Wide Operating Temperature Range: The STD5N60M2 can operate at temperatures up to 150°C, making it suitable for harsh environments.
  • RoHS3 Compliance: The STD5N60M2 is compliant with the RoHS3 directive, ensuring environmental sustainability and regulatory compliance.
  • REACH Unaffected Status: The STD5N60M2 is unaffected by the REACH regulation, ensuring uninterrupted supply and availability.

STD5N60M2 Applications

The STD5N60M2 is ideal for a wide range of applications due to its high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Some specific use cases include:

  • Power Supplies: The high voltage and current ratings make the STD5N60M2 suitable for power supply applications, such as switching power supplies and battery chargers.
  • Motor Control: The low on-resistance and fast switching speeds of the STD5N60M2 make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
  • Industrial Automation: The STD5N60M2 can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs), due to its high voltage and current ratings.
  • RF Power Amplifiers: The low gate charge and high input capacitance of the STD5N60M2 make it suitable for RF power amplifiers in communication systems.

Conclusion of STD5N60M2

The STD5N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its unique features, such as low gate charge and high input capacitance, make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and RF power amplifiers. With its RoHS3 compliance and REACH unaffected status, the STD5N60M2 is a reliable and environmentally friendly solution for high-performance electronic applications.

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