The STD5N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to provide superior performance in various electronic applications. This MOSFET is part of the MDmesh™ II Plus series and is manufactured using advanced MOSFET technology. With a drain-to-source voltage of 600V and a continuous drain current of 3.5A at 25°C, the STD5N60M2 is capable of handling high voltage and current requirements in various applications.
STD5N60M2 Features
High Drain-to-Source Voltage (Vdss): The STD5N60M2 can withstand a maximum drain-to-source voltage of 600V, making it suitable for high-voltage applications.
Low On-Resistance (Rds On): With a maximum on-resistance of 1.4Ω at 1.7A and 10V, the STD5N60M2 offers low power dissipation and high efficiency.
Low Gate Charge (Qg): The maximum gate charge is 8.5nC at 10V, which contributes to faster switching speeds and reduced power consumption.
High Input Capacitance (Ciss): The maximum input capacitance is 211pF at 100V, ensuring stable operation and minimal distortion in high-frequency applications.
Wide Operating Temperature Range: The STD5N60M2 can operate at temperatures up to 150°C, making it suitable for harsh environments.
RoHS3 Compliance: The STD5N60M2 is compliant with the RoHS3 directive, ensuring environmental sustainability and regulatory compliance.
REACH Unaffected Status: The STD5N60M2 is unaffected by the REACH regulation, ensuring uninterrupted supply and availability.
STD5N60M2 Applications
The STD5N60M2 is ideal for a wide range of applications due to its high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Some specific use cases include:
Power Supplies: The high voltage and current ratings make the STD5N60M2 suitable for power supply applications, such as switching power supplies and battery chargers.
Motor Control: The low on-resistance and fast switching speeds of the STD5N60M2 make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
Industrial Automation: The STD5N60M2 can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs), due to its high voltage and current ratings.
RF Power Amplifiers: The low gate charge and high input capacitance of the STD5N60M2 make it suitable for RF power amplifiers in communication systems.
Conclusion of STD5N60M2
The STD5N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its unique features, such as low gate charge and high input capacitance, make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and RF power amplifiers. With its RoHS3 compliance and REACH unaffected status, the STD5N60M2 is a reliable and environmentally friendly solution for high-performance electronic applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STD5N60M2 Documents
Download datasheets and manufacturer documentation for STD5N60M2
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Shipping Rate
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