STMicroelectronics_STD7NM60N

STMicroelectronics
STD7NM60N  
Single FETs, MOSFETs

STMicroelectronics
STD7NM60N
278-STD7NM60N
Ersa
STMicroelectronics-STD7NM60N-datasheets-2793602.pdf
MOSFET N-CH 600V 5A DPAK
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    STD7NM60N Description

    The STD7NM60N is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

    Description:

    The STD7NM60N is a high-power MOSFET that features a drain-source voltage (Vds) of 600V, a continuous drain current (Id) of 7.3A, and a gate-source voltage (Vgs) of ±20V. It is available in a TO-220 package, which is a popular choice for power electronic applications due to its robustness and ease of use.

    Features:

    1. High blocking voltage: The STD7NM60N can withstand a drain-source voltage of up to 600V, making it suitable for high-voltage applications.
    2. Low on-state resistance (Rds(on)): The on-state resistance of the STD7NM60N is low, which helps to minimize power losses and improve efficiency in power electronic circuits.
    3. High switching speed: The STD7NM60N has a fast switching speed, which allows it to operate efficiently in high-frequency applications.
    4. Robust design: The TO-220 package used for the STD7NM60N is designed to withstand high temperatures and mechanical stresses, making it suitable for use in harsh environments.

    Applications:

    1. Motor control: The STD7NM60N can be used in motor control applications, such as in industrial machinery and automotive systems, to control the speed and direction of the motor.
    2. Power supplies: The high blocking voltage and low on-state resistance of the STD7NM60N make it suitable for use in power supply applications, such as in switching power supplies and battery chargers.
    3. Energy management systems: The STD7NM60N can be used in energy management systems, such as in solar power systems and energy storage systems, to control the flow of energy and improve overall system efficiency.
    4. Inverters: The high switching speed and high blocking voltage of the STD7NM60N make it suitable for use in inverter applications, such as in renewable energy systems and electric vehicles.

    In summary, the STD7NM60N is a high-voltage N-channel MOSFET that offers a combination of high blocking voltage, low on-state resistance, and fast switching speed. It is available in a robust TO-220 package and is suitable for use in a variety of power electronic applications, including motor control, power supplies, energy management systems, and inverters.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD7NM60N Documents

    Download datasheets and manufacturer documentation for STD7NM60N

    Ersa STx7NM60N      
    Ersa Reel Design Change 22/Aug/2022       Box Label Chg 28/Jul/2016      
    Ersa STD7NM60N View All Specifications      
    Ersa STx7NM60N      

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