STMicroelectronics_STD16N60M6

STMicroelectronics
STD16N60M6  
Single FETs, MOSFETs

STMicroelectronics
STD16N60M6
278-STD16N60M6
Ersa
STMicroelectronics-STD16N60M6-datasheets-7329128.pdf
MOSFET N-CH 600V 12A DPAK
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STD16N60M6 Description

STD16N60M6 Description

The STD16N60M6 from STMicroelectronics is a high-performance N-channel 600V MOSFET designed for demanding power management applications. Part of the MDmesh™ M6 series, it combines low on-resistance (320mΩ @ 6A, 10V) with high switching efficiency, making it ideal for high-voltage, high-frequency circuits. With a continuous drain current (Id) of 12A (Tc) and a power dissipation of 110W (Tc), this device excels in energy-efficient designs. Its surface-mount DPAK package ensures compact integration, while RoHS3 compliance and REACH unaffected status meet environmental standards.

STD16N60M6 Features

  • High Voltage Rating: 600V Vdss for robust performance in industrial and automotive systems.
  • Low Gate Charge (Qg): 16.7 nC @ 10V minimizes switching losses, enhancing efficiency in high-frequency applications.
  • Optimized Rds(On): 320mΩ @ 6A reduces conduction losses, improving thermal management.
  • Wide Vgs Range: ±25V ensures compatibility with diverse drive circuits.
  • Advanced MDmesh™ M6 Technology: Delivers superior switching performance and avalanche ruggedness.
  • MSL 1 (Unlimited): Suitable for extended storage and handling without moisture sensitivity concerns.

STD16N60M6 Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency in AC-DC converters and offline power supplies.
  • Motor Drives: Reliable performance in industrial motor control and inverter systems.
  • Lighting Solutions: Ideal for LED drivers and ballast applications requiring high-voltage switching.
  • Renewable Energy: Solar inverters and battery management systems benefit from its low-loss characteristics.
  • Automotive Systems: Engine control units (ECUs) and DC-DC converters leverage its rugged design.

Conclusion of STD16N60M6

The STD16N60M6 stands out as a high-efficiency, high-voltage MOSFET tailored for modern power electronics. Its low Rds(On), fast switching, and robust thermal performance make it a superior choice for applications demanding reliability and energy savings. Whether in industrial automation, renewable energy, or automotive systems, this device delivers optimal performance while adhering to stringent environmental and quality standards.

Tech Specifications

Id - Continuous Drain Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Supplier Device Package
RoHS
Qg - Gate Charge
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Number of Channels
Technology
REACH Status
Mfr
Vgs (Max)
Maximum Operating Temperature
Rds On - Drain-Source Resistance
RoHS Status
Moisture Sensitivity Level (MSL)
Mounting Style
Operating Temperature
FET Feature
Vgs - Gate-Source Voltage
ECCN
Transistor Polarity
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Pd - Power Dissipation
USHTS
Base Product Number
Supplier Package
ECCN (US)
ECCN (EU)
Country of Origin

STD16N60M6 Documents

Download datasheets and manufacturer documentation for STD16N60M6

Ersa Capacity Expansion 30/Mar/2021      
Ersa STD16N60M6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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