STMicroelectronics_STB45N30M5

STMicroelectronics
STB45N30M5  
Single FETs, MOSFETs

STMicroelectronics
STB45N30M5
278-STB45N30M5
Ersa
STMicroelectronics-STB45N30M5-datasheets-12524281.pdf
NCHANNEL 300 V 0.037 OHM TYP. 53
In Stock : 1319

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STB45N30M5 Description

STB45N30M5 Description

The STB45N30M5 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring low on-resistance and high efficiency. This MOSFET is part of the MDmesh™ M5 series and is manufactured using advanced technology to ensure superior performance and reliability. With a drain-source voltage rating of 300V and a continuous drain current of 53A at 25°C, the STB45N30M5 is ideal for use in a wide range of power electronics applications.

STB45N30M5 Features

  • Low On-Resistance: The STB45N30M5 boasts a typical on-resistance of 0.037 Ohms, which contributes to high efficiency and reduced power loss in power conversion applications.
  • High Drain Current: Capable of handling continuous drain currents up to 53A at 25°C, the STB45N30M5 is suitable for high-current applications.
  • Robust Voltage Rating: With a drain-source voltage rating of 300V, this MOSFET can be used in high-voltage applications.
  • Surface Mount Package: The STB45N30M5 is available in a surface-mount package, making it suitable for use in compact and densely populated PCB designs.
  • Compliance with Regulations: The STB45N30M5 is compliant with RoHS3 and REACH standards, ensuring environmental and safety compliance in manufacturing processes.
  • Low Gate Charge: The maximum gate charge is 95 nC, which contributes to reduced switching losses and improved efficiency in high-frequency applications.

STB45N30M5 Applications

The STB45N30M5 is ideal for various applications where high efficiency, low on-resistance, and high current handling are required. Some specific use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the STB45N30M5 can efficiently handle high currents and voltages.
  • Motor Drives: The low on-resistance and high current capability make the STB45N30M5 suitable for motor control applications, such as electric vehicles and industrial motor drives.
  • Renewable Energy Systems: In solar inverters and wind power systems, the STB45N30M5 can provide efficient power conversion and control.
  • Industrial Automation: The STB45N30M5 can be used in industrial automation systems, such as robotics and conveyor systems, where high power and efficiency are critical.

Conclusion of STB45N30M5

The STB45N30M5 from STMicroelectronics is a high-performance N-channel MOSFET that offers a combination of low on-resistance, high current handling, and robust voltage rating. Its compliance with environmental and safety standards, along with its surface-mount package, makes it an ideal choice for a wide range of power electronics applications. The STB45N30M5's unique features and advantages over similar models make it a preferred choice for designers looking for high efficiency and reliability in their power electronics solutions.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Range
Grade
ECCN (EU)
RoHs compliant

STB45N30M5 Documents

Download datasheets and manufacturer documentation for STB45N30M5

Ersa STB45N30M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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