STMicroelectronics_STP6N60M2

STMicroelectronics
STP6N60M2  
Single FETs, MOSFETs

STMicroelectronics
STP6N60M2
278-STP6N60M2
Ersa
STMicroelectronics-STP6N60M2-datasheets-2292302.pdf
MOSFET N-CH 600V 4.5A TO220
In Stock : 1973

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STP6N60M2 Description

STP6N60M2 Description

The STP6N60M2 from STMicroelectronics is a 600V N-channel MOSFET designed for high-efficiency power switching applications. Part of the MDmesh™ II Plus series, it combines low on-resistance (1.2Ω @ 10V) with fast switching performance, making it ideal for demanding power conversion tasks. With a continuous drain current (Id) of 4.5A (Tc) and a power dissipation of 60W (Tc), this device is optimized for reliability in high-voltage environments. Its low gate charge (8nC @ 10V) and input capacitance (232pF @ 100V) ensure minimal switching losses, enhancing overall system efficiency. Packaged in a TO-220 through-hole format, it is suitable for industrial, automotive, and consumer applications requiring robust thermal and electrical performance.

STP6N60M2 Features

  • High Voltage Rating: 600V Vdss ensures suitability for AC-DC converters, SMPS, and motor drives.
  • Low On-Resistance: 1.2Ω @ 10V reduces conduction losses, improving thermal management.
  • Fast Switching: Low Qg (8nC) and Ciss (232pF) minimize switching delays and energy losses.
  • Robust Construction: MDmesh™ II Plus technology enhances avalanche ruggedness and dv/dt capability.
  • Wide Gate Drive Range: ±25V Vgs(max) offers flexibility in gate drive design.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) ensure environmental and regulatory compatibility.

STP6N60M2 Applications

  • Switch-Mode Power Supplies (SMPS): High-voltage input stages and PFC circuits.
  • Lighting Systems: Ballasts and LED drivers requiring efficient power handling.
  • Motor Control: Inverters and H-bridge configurations for industrial and automotive systems.
  • DC-DC Converters: Isolated and non-isolated topologies in telecom and renewable energy systems.
  • Consumer Electronics: Power adapters and battery chargers where reliability is critical.

Conclusion of STP6N60M2

The STP6N60M2 stands out as a high-performance 600V MOSFET with low Rds(on), fast switching, and excellent thermal characteristics, making it a preferred choice for power electronics designers. Its MDmesh™ II Plus technology ensures superior efficiency and ruggedness, while its TO-220 package simplifies thermal management in high-power applications. Whether used in SMPS, motor drives, or lighting systems, this MOSFET delivers a balance of cost-effectiveness, reliability, and performance, aligning with modern energy-efficient design requirements.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP6N60M2 Documents

Download datasheets and manufacturer documentation for STP6N60M2

Ersa Product Change Notification 2024-12-04 (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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