STMicroelectronics_STP6N60M2
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STMicroelectronics
STP6N60M2

278-STP6N60M2
PDF Datasheet
600V N-CH MOSFET, 4.5A, 1.2R Rds(on), TO-220
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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.06R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.2R
Fall Time
22.5ns
Gate to Source Voltage (Vgs)
25V
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STP6N60M2 Description

STP6N60M2 Description

The STP6N60M2 from STMicroelectronics is a 600V N-channel MOSFET designed for high-efficiency power switching applications. Part of the MDmesh™ II Plus series, it combines low on-resistance (1.2Ω @ 10V) with fast switching performance, making it ideal for demanding power conversion tasks. With a continuous drain current (Id) of 4.5A (Tc) and a power dissipation of 60W (Tc), this device is optimized for reliability in high-voltage environments. Its low gate charge (8nC @ 10V) and input capacitance (232pF @ 100V) ensure minimal switching losses, enhancing overall system efficiency. Packaged in a TO-220 through-hole format, it is suitable for industrial, automotive, and consumer applications requiring robust thermal and electrical performance.

STP6N60M2 Features

  • High Voltage Rating: 600V Vdss ensures suitability for AC-DC converters, SMPS, and motor drives.
  • Low On-Resistance: 1.2Ω @ 10V reduces conduction losses, improving thermal management.
  • Fast Switching: Low Qg (8nC) and Ciss (232pF) minimize switching delays and energy losses.
  • Robust Construction: MDmesh™ II Plus technology enhances avalanche ruggedness and dv/dt capability.
  • Wide Gate Drive Range: ±25V Vgs(max) offers flexibility in gate drive design.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) ensure environmental and regulatory compatibility.

STP6N60M2 Applications

  • Switch-Mode Power Supplies (SMPS): High-voltage input stages and PFC circuits.
  • Lighting Systems: Ballasts and LED drivers requiring efficient power handling.
  • Motor Control: Inverters and H-bridge configurations for industrial and automotive systems.
  • DC-DC Converters: Isolated and non-isolated topologies in telecom and renewable energy systems.
  • Consumer Electronics: Power adapters and battery chargers where reliability is critical.

Conclusion of STP6N60M2

The STP6N60M2 stands out as a high-performance 600V MOSFET with low Rds(on), fast switching, and excellent thermal characteristics, making it a preferred choice for power electronics designers. Its MDmesh™ II Plus technology ensures superior efficiency and ruggedness, while its TO-220 package simplifies thermal management in high-power applications. Whether used in SMPS, motor drives, or lighting systems, this MOSFET delivers a balance of cost-effectiveness, reliability, and performance, aligning with modern energy-efficient design requirements.

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