The STP6N60M2 from STMicroelectronics is a 600V N-channel MOSFET designed for high-efficiency power switching applications. Part of the MDmesh™ II Plus series, it combines low on-resistance (1.2Ω @ 10V) with fast switching performance, making it ideal for demanding power conversion tasks. With a continuous drain current (Id) of 4.5A (Tc) and a power dissipation of 60W (Tc), this device is optimized for reliability in high-voltage environments. Its low gate charge (8nC @ 10V) and input capacitance (232pF @ 100V) ensure minimal switching losses, enhancing overall system efficiency. Packaged in a TO-220 through-hole format, it is suitable for industrial, automotive, and consumer applications requiring robust thermal and electrical performance.
The STP6N60M2 stands out as a high-performance 600V MOSFET with low Rds(on), fast switching, and excellent thermal characteristics, making it a preferred choice for power electronics designers. Its MDmesh™ II Plus technology ensures superior efficiency and ruggedness, while its TO-220 package simplifies thermal management in high-power applications. Whether used in SMPS, motor drives, or lighting systems, this MOSFET delivers a balance of cost-effectiveness, reliability, and performance, aligning with modern energy-efficient design requirements.
Download datasheets and manufacturer documentation for STP6N60M2