STMicroelectronics
STW50N65DM2AG
Single FETs, MOSFETs
STW50N65DM2AG
278-STW50N65DM2AG
STMicroelectronics-STW50N65DM2AG-datasheets-5991178.pdf
MOSFET N-CH 650V 28A TO247
In Stock : 777
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STW50N65DM2AG Description
STW50N65DM2AG is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in a wide range of power electronic applications, including motor control, power supplies, and automotive systems.
Description:
The STW50N65DM2AG is a N-channel MOSFET with a voltage rating of 650V and a continuous drain current of 50A. It features a low on-state resistance (RDS(on)) of 0.55 ohms (maximum), which helps to minimize power dissipation and improve efficiency in power conversion applications. The device is available in a TO-220AB package, which is suitable for use in a variety of power electronic systems.
Features:
- High voltage rating: The STW50N65DM2AG has a breakdown voltage (V(BR)) of 650V, making it suitable for use in high-voltage applications.
- Low on-state resistance: The device has a low RDS(on) of 0.55 ohms (maximum), which helps to minimize power dissipation and improve efficiency in power conversion applications.
- High switching speed: The STW50N65DM2AG has a fast switching speed, which makes it suitable for use in high-frequency applications.
- Robust protection features: The device includes built-in protection features, such as over-voltage, over-current, and over-temperature protection, which help to ensure reliable operation in a variety of applications.
- Wide operating temperature range: The STW50N65DM2AG can operate over a wide temperature range of -65°C to +175°C, making it suitable for use in harsh environments.
Applications:
- Motor control: The STW50N65DM2AG is well-suited for use in motor control applications, such as industrial motor drives, HVAC systems, and robotics.
- Power supplies: The device can be used in a variety of power supply applications, including switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and battery chargers.
- Automotive systems: The STW50N65DM2AG is suitable for use in automotive applications, such as electric vehicle (EV) charging systems, power steering systems, and engine management systems.
- Renewable energy systems: The device can be used in renewable energy applications, such as solar panel power conditioning systems and wind turbine power converters.
- Industrial control systems: The STW50N65DM2AG can be used in a variety of industrial control systems, such as conveyor systems, machine tools, and packaging equipment.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant
STW50N65DM2AG Documents
Download datasheets and manufacturer documentation for STW50N65DM2AG
New Molding Compound 30/Aug/2019 STW50N65DM2AG Standard outer labelling 15/Nov/2023 STW50N65DM2AG Related Parts
Shopping Guide
Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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