STMicroelectronics_STW26NM50

STMicroelectronics
STW26NM50  
Single FETs, MOSFETs

STMicroelectronics
STW26NM50
278-STW26NM50
MOSFET N-CH 500V 30A TO247-3
In Stock : 113

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STW26NM50 Description

STW26NM50 Description

The STW26NM50 is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics. This device is part of the MDmesh™ series and is offered in a TO247-3 package. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C, the STW26NM50 is suitable for various high-power applications. The device is designed to operate at an elevated junction temperature of 150°C (TJ) and has a maximum power dissipation of 313W (Tc). The STW26NM50 is compliant with the RoHS3 standard and is classified as REACH unaffected.

STW26NM50 Features

  • High Voltage and Current Ratings: The STW26NM50 boasts a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device features a maximum on-resistance (Rds On) of 120mOhm at 13A and 10V, contributing to high efficiency in power management.
  • Gate Charge and Input Capacitance: The STW26NM50 has a maximum gate charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 3000 pF at 25V, ensuring fast switching and reduced power loss.
  • Robust Operating Temperature: The device can operate at a junction temperature of up to 150°C (TJ), making it suitable for applications with high thermal demands.
  • Compliance and Environmental Standards: The STW26NM50 is compliant with RoHS3 and is classified as REACH unaffected, ensuring environmental responsibility.

STW26NM50 Applications

The STW26NM50 is ideal for various high-power applications due to its high voltage and current ratings, low on-resistance, and robust operating temperature. Some specific use cases include:

  1. Power Supplies: The STW26NM50 can be used in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS), where high efficiency and reliability are critical.
  2. Industrial Control Systems: The device is suitable for motor control applications in industrial settings, where high power and temperature resistance are required.
  3. Automotive Applications: The STW26NM50 can be used in automotive systems, such as electric vehicle (EV) chargers and power management systems, where high voltage and current ratings are essential.

Conclusion of STW26NM50

The STW26NM50 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and robust operating temperature. Its compliance with RoHS3 and REACH unaffected status ensures environmental responsibility. The STW26NM50 is ideal for high-power applications, such as power supplies, industrial control systems, and automotive applications, where performance and reliability are paramount.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STW26NM50 Documents

Download datasheets and manufacturer documentation for STW26NM50

Ersa IPG/14/8475 16/May/2014      
Ersa STW26NM50      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW26NM50 View All Specifications      
Ersa STW26NM50      

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