STMicroelectronics
STW12N150K5  
Single FETs, MOSFETs

STMicroelectronics
STW12N150K5
278-STW12N150K5
Ersa
STMicroelectronics-STW12N150K5-datasheets-13421637.pdf
MOSFET N-CH 1500V 7A TO247
In Stock : 365

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STW12N150K5 Description

STW12N150K5 is a high voltage N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

Description:

The STW12N150K5 is an N-channel enhancement mode field effect transistor (MOSFET) with a high voltage rating of 1500V and a continuous drain current (Id) of 150A. It is available in a TO-247AC package, which is suitable for high power applications.

Features:

  • High voltage rating of 1500V
  • Continuous drain current (Id) of 150A
  • N-channel enhancement mode MOSFET
  • Low on-state resistance (RDS(on))
  • High switching speed
  • Low gate charge
  • Suitable for use in high power applications

Applications:

The STW12N150K5 is suitable for use in a variety of applications, including:

  • Motor control
  • Power supplies
  • Power conversion systems
  • Industrial control systems
  • Automotive applications
  • Renewable energy systems

Overall, the STW12N150K5 is a high performance MOSFET that offers excellent electrical characteristics and is suitable for use in a wide range of high power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW12N150K5 Documents

Download datasheets and manufacturer documentation for STW12N150K5

Ersa STW12N150K5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW12N150K5      

Shopping Guide

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