STMicroelectronics_STU6N95K5

STMicroelectronics
STU6N95K5  
Single FETs, MOSFETs

STMicroelectronics
STU6N95K5
278-STU6N95K5
Ersa
STMicroelectronics-STU6N95K5-datasheets-1684299.pdf
MOSFET N-CH 950V 9A IPAK
In Stock : 5463

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STU6N95K5 Description

STU6N95K5 Description

The STU6N95K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. This N-Channel device features a SuperMESH5™ series design, which offers superior thermal performance and reliability. With a maximum drain-to-source voltage (Vdss) of 950V and a continuous drain current (Id) of 9A at 25°C, the STU6N95K5 is well-suited for various power electronics applications.

STU6N95K5 Features

  • High Voltage and Current Handling: The STU6N95K5 can handle a maximum drain-to-source voltage of 950V and a continuous drain current of 9A at 25°C, making it ideal for high-power applications.
  • Superior Thermal Performance: The SuperMESH5™ series design provides excellent thermal performance, ensuring reliable operation even under demanding conditions.
  • Low On-Resistance: The STU6N95K5 has a maximum on-resistance (Rds On) of 1.25Ω at 3A and 10V, contributing to high efficiency in power conversion applications.
  • Low Gate Charge: With a maximum gate charge (Qg) of 13nC at 10V, the STU6N95K5 minimizes switching losses, improving overall system efficiency.
  • Robust Package: The device is available in a through-hole tube package, providing a secure and reliable mechanical connection for high-power applications.
  • Environmental Compliance: The STU6N95K5 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STU6N95K5 Applications

The STU6N95K5 is ideal for a wide range of power electronics applications, including:

  • Power Supplies: Due to its high voltage and current handling capabilities, the STU6N95K5 is well-suited for power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
  • Motor Controls: The device's high voltage and low on-resistance make it an excellent choice for motor control applications, including electric vehicles, industrial drives, and robotics.
  • Renewable Energy Systems: The STU6N95K5 can be used in solar inverters and wind power systems, where high voltage and current handling are critical.
  • Industrial Automation: The device's robust performance and reliability make it suitable for industrial automation applications, such as motor drives and power distribution systems.

Conclusion of STU6N95K5

The STU6N95K5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, superior thermal performance, and low on-resistance. Its SuperMESH5™ series design, compliance with environmental regulations, and robust package make it an ideal choice for a wide range of power electronics applications. With its unique features and advantages over similar models, the STU6N95K5 is a reliable and efficient solution for demanding power conversion and motor control applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STU6N95K5 Documents

Download datasheets and manufacturer documentation for STU6N95K5

Ersa Assembly Site 22/Nov/2022      
Ersa STx6N95K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STU6N95K5 View All Specifications      
Ersa STx6N95K5      

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