STMicroelectronics_STF19NM50N

STMicroelectronics
STF19NM50N  
Single FETs, MOSFETs

STMicroelectronics
STF19NM50N
278-STF19NM50N
Ersa
STMicroelectronics-STF19NM50N-datasheets-13186448.pdf
MOSFET N-CH 500V 14A TO220FP
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STF19NM50N Description

STF19NM50N Description

The STF19NM50N is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 14A at 25°C, this MOSFET is suitable for a wide range of power electronics applications.

STF19NM50N Features

  • High Voltage and Current Ratings: The STF19NM50N boasts a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 14A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 250mOhm at 7A and 10V, the STF19NM50N offers low power dissipation and high efficiency.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation in various gate drive circuits.
  • Low Gate Charge: The maximum gate charge (Qg) is 34nC at 10V, contributing to fast switching speeds and low switching losses.
  • Thermal Performance: The STF19NM50N has a maximum power dissipation of 30W (Tc) and an operating junction temperature (TJ) of 150°C, ensuring reliable operation in high-temperature environments.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious applications.
  • Mounting Type: The STF19NM50N is available in a through-hole TO220FP package, providing a robust and reliable mechanical connection.

STF19NM50N Applications

The STF19NM50N is ideal for a variety of power electronics applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: The low on-resistance and fast switching capabilities make the STF19NM50N an excellent choice for motor control applications, including brushless DC (BLDC) motors and stepper motors.
  • Industrial Automation: The device's robust performance and environmental compliance make it suitable for use in industrial automation systems, such as robotic arms and conveyor systems.
  • Automotive Applications: The STF19NM50N can be used in various automotive applications, including electric vehicle (EV) charging systems, battery management systems, and power window controls.

Conclusion of STF19NM50N

The STF19NM50N from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and robust thermal performance make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and automotive systems. With its environmental compliance and reliable mechanical connection, the STF19NM50N is a versatile and dependable solution for engineers designing high-performance electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF19NM50N Documents

Download datasheets and manufacturer documentation for STF19NM50N

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