STMicroelectronics_STN3P6F6

STMicroelectronics
STN3P6F6  
Single FETs, MOSFETs

STMicroelectronics
STN3P6F6
278-STN3P6F6
Ersa
STMicroelectronics-STN3P6F6-datasheets-1470639.pdf
MOSFET P-CH 60V SOT223
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    STN3P6F6 Description

    STN3P6F6 Description

    The STN3P6F6 is a high-performance P-Channel MOSFET from STMicroelectronics, designed to deliver superior performance in various electronic applications. This MOSFET features a drain-to-source voltage (Vdss) of 60V, making it suitable for high-voltage applications. With a maximum power dissipation of 2.6W (Tc), the STN3P6F6 can handle demanding power requirements. Its low gate charge (Qg) of 6.4 nC @ 10V and low input capacitance (Ciss) of 340 pF @ 48V contribute to its fast switching capabilities, making it ideal for high-frequency applications.

    STN3P6F6 Features

    • DeepGATE™, STripFET™ VI Series: The STN3P6F6 belongs to the DeepGATE™, STripFET™ VI series, which is known for its excellent performance and reliability.
    • Low Rds On: With a maximum Rds On of 160mOhm @ 1.5A, 10V, the STN3P6F6 offers low on-resistance, reducing power loss and improving efficiency.
    • High Input Capacitance: The 340 pF @ 48V input capacitance ensures fast switching and high-frequency operation.
    • Low Gate Charge: The 6.4 nC @ 10V gate charge enables fast switching and reduces power consumption.
    • Robust Voltage Ratings: The STN3P6F6 can handle a maximum Vgs of ±20V and a Vdss of 60V, making it suitable for high-voltage applications.
    • Compliance: The STN3P6F6 is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1 (unlimited), ensuring environmental and regulatory compliance.

    STN3P6F6 Applications

    The STN3P6F6 is ideal for a wide range of applications, including:

    1. Power Management: Due to its high voltage and power ratings, the STN3P6F6 is suitable for power management applications in various electronic devices.
    2. Motor Control: Its low Rds On and high Vdss make it an excellent choice for motor control applications, providing efficient power switching and control.
    3. Automotive Electronics: The STN3P6F6 can be used in automotive electronics, such as power windows, seat controls, and other high-voltage applications.
    4. Industrial Control: Its robust voltage ratings and fast switching capabilities make it suitable for industrial control applications, such as motor drives and power supplies.

    Conclusion of STN3P6F6

    The STN3P6F6 is a high-performance P-Channel MOSFET from STMicroelectronics, offering excellent technical specifications and performance benefits. Its low Rds On, high input capacitance, and low gate charge make it ideal for high-frequency and high-voltage applications. With its compliance to various environmental and regulatory standards, the STN3P6F6 is a reliable choice for a wide range of applications, including power management, motor control, automotive electronics, and industrial control.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STN3P6F6 Documents

    Download datasheets and manufacturer documentation for STN3P6F6

    Ersa Product Change Notification (PDF)      

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