The STN3P6F6 is a high-performance P-Channel MOSFET from STMicroelectronics, designed to deliver superior performance in various electronic applications. This MOSFET features a drain-to-source voltage (Vdss) of 60V, making it suitable for high-voltage applications. With a maximum power dissipation of 2.6W (Tc), the STN3P6F6 can handle demanding power requirements. Its low gate charge (Qg) of 6.4 nC @ 10V and low input capacitance (Ciss) of 340 pF @ 48V contribute to its fast switching capabilities, making it ideal for high-frequency applications.
STN3P6F6 Features
DeepGATE™, STripFET™ VI Series: The STN3P6F6 belongs to the DeepGATE™, STripFET™ VI series, which is known for its excellent performance and reliability.
Low Rds On: With a maximum Rds On of 160mOhm @ 1.5A, 10V, the STN3P6F6 offers low on-resistance, reducing power loss and improving efficiency.
High Input Capacitance: The 340 pF @ 48V input capacitance ensures fast switching and high-frequency operation.
Low Gate Charge: The 6.4 nC @ 10V gate charge enables fast switching and reduces power consumption.
Robust Voltage Ratings: The STN3P6F6 can handle a maximum Vgs of ±20V and a Vdss of 60V, making it suitable for high-voltage applications.
Compliance: The STN3P6F6 is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1 (unlimited), ensuring environmental and regulatory compliance.
STN3P6F6 Applications
The STN3P6F6 is ideal for a wide range of applications, including:
Power Management: Due to its high voltage and power ratings, the STN3P6F6 is suitable for power management applications in various electronic devices.
Motor Control: Its low Rds On and high Vdss make it an excellent choice for motor control applications, providing efficient power switching and control.
Automotive Electronics: The STN3P6F6 can be used in automotive electronics, such as power windows, seat controls, and other high-voltage applications.
Industrial Control: Its robust voltage ratings and fast switching capabilities make it suitable for industrial control applications, such as motor drives and power supplies.
Conclusion of STN3P6F6
The STN3P6F6 is a high-performance P-Channel MOSFET from STMicroelectronics, offering excellent technical specifications and performance benefits. Its low Rds On, high input capacitance, and low gate charge make it ideal for high-frequency and high-voltage applications. With its compliance to various environmental and regulatory standards, the STN3P6F6 is a reliable choice for a wide range of applications, including power management, motor control, automotive electronics, and industrial control.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STN3P6F6 Documents
Download datasheets and manufacturer documentation for STN3P6F6
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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