STMicroelectronics_STB12NK80ZT4

STMicroelectronics
STB12NK80ZT4  
Single FETs, MOSFETs

STMicroelectronics
STB12NK80ZT4
278-STB12NK80ZT4
MOSFET N-CH 800V 10.5A D2PAK
In Stock : 1276

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STB12NK80ZT4 Description

STB12NK80ZT4 Description

The STB12NK80ZT4 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require robust power handling and efficient switching. This N-Channel device features a drain-to-source voltage (Vdss) of 800V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 10.5A at 25°C, the STB12NK80ZT4 can handle significant power loads while maintaining low power dissipation.

STB12NK80ZT4 Features

  • High Voltage Tolerance: The STB12NK80ZT4 can withstand drain-to-source voltages up to 800V, making it ideal for high-voltage applications.
  • Low On-Resistance: With an Rds(on) of 750mOhm at 5.25A and 10V, the STB12NK80ZT4 offers low power losses during operation.
  • Efficient Switching: The device has a low gate charge (Qg) of 87nC at 10V, enabling fast switching and reduced power consumption.
  • Robust Construction: The D2PAK package is designed for surface mount applications, providing a reliable and compact solution for space-constrained designs.
  • Environmental Compliance: The STB12NK80ZT4 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.
  • Reliability: With a moisture sensitivity level (MSL) of 1, the device can be stored and handled without special precautions, reducing manufacturing complexity.

STB12NK80ZT4 Applications

The STB12NK80ZT4 is well-suited for a variety of applications where high voltage and power handling are required:

  • Power Supplies: The high voltage and low on-resistance make it ideal for power supply designs, particularly in industrial and automotive applications.
  • Motor Controls: The device's ability to handle high currents and voltages makes it suitable for motor control applications, such as in electric vehicles and industrial automation.
  • Renewable Energy: The STB12NK80ZT4 can be used in solar inverters and wind turbine power conversion systems, where high voltage and power efficiency are critical.
  • Industrial Automation: The device's robustness and reliability make it suitable for use in industrial automation systems, such as robotic arms and conveyor systems.

Conclusion of STB12NK80ZT4

The STB12NK80ZT4 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of high voltage tolerance, low on-resistance, and efficient switching. Its robust construction, environmental compliance, and reliability make it an excellent choice for a wide range of applications, from power supplies to motor controls and renewable energy systems. With its unique features and advantages, the STB12NK80ZT4 stands out as a reliable and efficient solution for demanding power electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB12NK80ZT4 Documents

Download datasheets and manufacturer documentation for STB12NK80ZT4

Ersa STx12NK80Z      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB12NK80Z View All Specifications      
Ersa STx12NK80Z      
Ersa D2PAK Lead Modification 04/Oct/2013      

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