STMicroelectronics_STD3NK80Z-1

STMicroelectronics
STD3NK80Z-1  
Single FETs, MOSFETs

STMicroelectronics
STD3NK80Z-1
278-STD3NK80Z-1
MOSFET N-CH 800V 2.5A IPAK
In Stock : 3456

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    STD3NK80Z-1 Description

    STD3NK80Z-1 Description

    The STD3NK80Z-1 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require high voltage and current capabilities. This N-Channel device features an 800V drain-to-source voltage (Vdss) rating, making it suitable for high-voltage applications. With a continuous drain current (Id) of 2.5A at 25°C, the STD3NK80Z-1 can handle significant power dissipation, up to 70W (Tc). The device is mounted through-hole and comes in a tube package, ensuring reliable performance in various electronic systems.

    STD3NK80Z-1 Features

    • High Voltage Rating: The STD3NK80Z-1 boasts an 800V drain-to-source voltage (Vdss), making it ideal for high-voltage applications such as power supplies, motor controls, and industrial equipment.
    • Low On-Resistance: With a maximum Rds(on) of 4.5Ω at 1.25A and 10V, the STD3NK80Z-1 offers low on-resistance, reducing power losses and improving efficiency in power management systems.
    • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of input voltages.
    • Low Input Capacitance: The STD3NK80Z-1 features a low input capacitance (Ciss) of 485pF at 25V, which helps reduce switching losses and improve overall performance.
    • Compliance with Regulations: The STD3NK80Z-1 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental and safety regulations.

    STD3NK80Z-1 Applications

    The STD3NK80Z-1 is well-suited for a variety of applications where high voltage and current capabilities are required. Some specific use cases include:

    • Power Supplies: The high voltage rating and low on-resistance make the STD3NK80Z-1 ideal for power supply designs, particularly in industrial and automotive applications.
    • Motor Controls: The device's high voltage and current ratings, combined with its low on-resistance, make it suitable for motor control applications, such as electric vehicle motor drives and industrial motor control systems.
    • Industrial Equipment: The STD3NK80Z-1's robust performance and high voltage rating make it an excellent choice for industrial equipment, such as power inverters and high-voltage switching circuits.

    Conclusion of STD3NK80Z-1

    The STD3NK80Z-1 from STMicroelectronics is a high-performance MOSFET designed for demanding high-voltage applications. Its combination of high voltage and current ratings, low on-resistance, and compliance with environmental and safety regulations make it an ideal choice for power supplies, motor controls, and industrial equipment. With its unique features and advantages over similar models, the STD3NK80Z-1 is a reliable and efficient solution for a wide range of electronic systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD3NK80Z-1 Documents

    Download datasheets and manufacturer documentation for STD3NK80Z-1

    Ersa IPAK and Short IPAK in ECOPACK 2, graded Moulding Compound Assembly capacity expansion - Nantong Fujitsu Microelectronics (China) Subcontractor (PDF)       Product Change Notification (PDF)      

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