The STD3NK80Z-1 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require high voltage and current capabilities. This N-Channel device features an 800V drain-to-source voltage (Vdss) rating, making it suitable for high-voltage applications. With a continuous drain current (Id) of 2.5A at 25°C, the STD3NK80Z-1 can handle significant power dissipation, up to 70W (Tc). The device is mounted through-hole and comes in a tube package, ensuring reliable performance in various electronic systems.
STD3NK80Z-1 Features
High Voltage Rating: The STD3NK80Z-1 boasts an 800V drain-to-source voltage (Vdss), making it ideal for high-voltage applications such as power supplies, motor controls, and industrial equipment.
Low On-Resistance: With a maximum Rds(on) of 4.5Ω at 1.25A and 10V, the STD3NK80Z-1 offers low on-resistance, reducing power losses and improving efficiency in power management systems.
Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of input voltages.
Low Input Capacitance: The STD3NK80Z-1 features a low input capacitance (Ciss) of 485pF at 25V, which helps reduce switching losses and improve overall performance.
Compliance with Regulations: The STD3NK80Z-1 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental and safety regulations.
STD3NK80Z-1 Applications
The STD3NK80Z-1 is well-suited for a variety of applications where high voltage and current capabilities are required. Some specific use cases include:
Power Supplies: The high voltage rating and low on-resistance make the STD3NK80Z-1 ideal for power supply designs, particularly in industrial and automotive applications.
Motor Controls: The device's high voltage and current ratings, combined with its low on-resistance, make it suitable for motor control applications, such as electric vehicle motor drives and industrial motor control systems.
Industrial Equipment: The STD3NK80Z-1's robust performance and high voltage rating make it an excellent choice for industrial equipment, such as power inverters and high-voltage switching circuits.
Conclusion of STD3NK80Z-1
The STD3NK80Z-1 from STMicroelectronics is a high-performance MOSFET designed for demanding high-voltage applications. Its combination of high voltage and current ratings, low on-resistance, and compliance with environmental and safety regulations make it an ideal choice for power supplies, motor controls, and industrial equipment. With its unique features and advantages over similar models, the STD3NK80Z-1 is a reliable and efficient solution for a wide range of electronic systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STD3NK80Z-1 Documents
Download datasheets and manufacturer documentation for STD3NK80Z-1
IPAK and Short IPAK in ECOPACK 2, graded Moulding Compound Assembly capacity expansion - Nantong Fujitsu Microelectronics (China) Subcontractor (PDF) Product Change Notification (PDF)
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