STMicroelectronics_STP23NM50N

STMicroelectronics
STP23NM50N  
Single FETs, MOSFETs

STMicroelectronics
STP23NM50N
278-STP23NM50N
Ersa
STMicroelectronics-STP23NM50N-datasheets-1038180.pdf
MOSFET N-CH 500V 17A TO220-3
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STP23NM50N Description

STP23NM50N Description

The STP23NM50N is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-source voltage rating of 500V and a continuous drain current of 17A at 25°C, this device is well-suited for demanding power electronics applications. The STP23NM50N features a low on-resistance of 190mOhm at 8.5A and 10V, ensuring efficient power dissipation and reduced power loss. The device is housed in a TO220-3 package, making it suitable for through-hole mounting in various electronic systems.

STP23NM50N Features

  • High Voltage Rating: The STP23NM50N boasts a drain-source voltage rating of 500V, making it ideal for high-voltage applications.
  • Low On-Resistance: With an on-resistance of just 190mOhm at 8.5A and 10V, this MOSFET offers efficient power dissipation and reduced power loss.
  • High Current Handling: Capable of handling continuous drain currents up to 17A at 25°C, the STP23NM50N is suitable for high-current applications.
  • Low Gate Charge: The device features a low gate charge of 45nC at 10V, enabling fast switching and reduced switching losses.
  • Robust Temperature Performance: The STP23NM50N operates over a wide temperature range, with a maximum junction temperature of 150°C, making it suitable for harsh environments.
  • Compliance: This MOSFET is compliant with the REACH regulation and RoHS3 directive, ensuring environmental and safety compliance.

STP23NM50N Applications

The STP23NM50N is an ideal choice for various high-voltage and high-current applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP23NM50N is well-suited for power supply designs, particularly in industrial and automotive applications.
  • Motor Controls: The device's high current handling capabilities make it suitable for motor control applications, such as in electric vehicles and industrial motor drives.
  • Inverters: The STP23NM50N can be used in inverter designs for renewable energy systems, such as solar inverters, due to its ability to handle high voltages and currents.
  • Industrial Automation: The robust temperature performance and high voltage rating of this MOSFET make it an excellent choice for industrial automation applications, such as robotic systems and control panels.

Conclusion of STP23NM50N

The STP23NM50N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding high-voltage and high-current applications. Its combination of low on-resistance, high current handling, and robust temperature performance make it an ideal choice for power supplies, motor controls, inverters, and industrial automation systems. With its compliance to REACH and RoHS3 regulations, the STP23NM50N is not only a high-performance device but also an environmentally responsible choice for electronic design engineers.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP23NM50N Documents

Download datasheets and manufacturer documentation for STP23NM50N

Ersa Product Change Notification 2024-12-04 (PDF)       TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF)       MDmesh II Technology, Power MOSFET Transistors, 8" Wafer size Front-end Capacity Extension - Ang Mo Kio (Singapore) (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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