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STW12NK80Z
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STW12NK80Z Description
STW12NK80Z Description
The STW12NK80Z from STMicroelectronics is an N-channel 800V power MOSFET belonging to the SuperMESH™ series, designed for high-voltage switching applications. With a continuous drain current (Id) of 10.5A (at Tc = 25°C) and a low on-resistance (Rds(on)) of 750mΩ at 10V Vgs, this device offers excellent efficiency in power conversion systems. Its TO-247-3 through-hole package ensures robust thermal performance, supporting a maximum power dissipation of 190W (Tc). The MOSFET features a gate charge (Qg) of 87nC and an input capacitance (Ciss) of 2620pF, enabling fast switching with minimal losses.
STW12NK80Z Features
- High Voltage Rating: 800V Vdss for demanding industrial and automotive applications.
- Low Rds(on): 750mΩ @ 10V Vgs reduces conduction losses, improving efficiency.
- Fast Switching: Optimized Qg (87nC) and Ciss (2620pF) ensure rapid turn-on/off.
- Robust Thermal Performance: 190W max power dissipation in TO-247-3 package.
- Wide Drive Voltage Range: ±30V Vgs(max) for flexible gate control.
- Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term stability.
STW12NK80Z Applications
- Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC and DC-DC converters.
- Motor Drives & Inverters: Suitable for industrial motor control and renewable energy systems.
- Lighting Solutions: LED drivers and HID ballasts requiring high-voltage switching.
- Automotive Systems: Electric vehicle (EV) charging and auxiliary power modules.
- Industrial Equipment: Welding machines, UPS systems, and high-power converters.
Conclusion of STW12NK80Z
The STW12NK80Z stands out as a high-performance 800V MOSFET with low conduction losses, fast switching, and excellent thermal characteristics. Its SuperMESH™ technology ensures superior efficiency in high-voltage applications, making it ideal for power supplies, motor drives, and automotive systems. With STMicroelectronics' proven reliability and compliance with ROHS3/REACH, this MOSFET is a dependable choice for engineers designing next-generation power electronics.



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