STMicroelectronics_STFU9N65M2

STMicroelectronics
STFU9N65M2  
Single FETs, MOSFETs

STMicroelectronics
STFU9N65M2
278-STFU9N65M2
Ersa
STMicroelectronics-STFU9N65M2-datasheets-3280328.pdf
MOSFET N-CH 650V 5A TO220FP
In Stock : 891

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    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STFU9N65M2 Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STFU9N65M2 belongs to can be classified under the Discrete Semiconductors. STFU9N65M2 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STFU9N65M2 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Channel Mode
    Product Status
    Fall Time
    RoHS
    Drain to Source Voltage (Vdss)
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    FET Type
    Supplier Device Package
    Qg - Gate Charge
    Power Dissipation (Max)
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Pd - Power Dissipation
    Base Product Number
    Supplier Package
    ECCN (US)
    Grade
    ECCN (EU)
    RoHs compliant

    STFU9N65M2 Documents

    Download datasheets and manufacturer documentation for STFU9N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STFU9N65M2      
    Ersa STFU9N65M2      

    Shopping Guide

    Payment Methods
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    Shipping Rate
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