STMicroelectronics_STP11NM60

STMicroelectronics
STP11NM60  
Single FETs, MOSFETs

STMicroelectronics
STP11NM60
278-STP11NM60
MOSFET N-CH 650V 11A TO220AB
In Stock : 517

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STP11NM60 Description

STP11NM60 Description

The STP11NM60 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C, this device is well-suited for various power electronics applications. The STP11NM60 is built using advanced MOSFET technology, offering excellent switching performance and low on-resistance.

STP11NM60 Features

  • High Voltage and Current Ratings: The STP11NM60 can handle drain-to-source voltages up to 650V and continuous drain currents up to 11A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 450mOhm at 5.5A and 10V, the STP11NM60 offers low conduction losses, improving efficiency in power conversion systems.
  • Advanced MOSFET Technology: The STP11NM60 utilizes STMicroelectronics' MDmesh™ technology, providing superior switching performance and thermal management.
  • Robust Package: The device is packaged in a TO220AB through-hole package, ensuring reliable mechanical and thermal performance in various applications.
  • Environmental Compliance: The STP11NM60 is REACH unaffected and RoHS3 compliant, meeting stringent environmental regulations.

STP11NM60 Applications

The STP11NM60 is an excellent choice for applications requiring high voltage and current handling capabilities, such as:

  • Power Supplies: The STP11NM60's high voltage and current ratings make it suitable for use in power supply designs, including switching power supplies and power factor correction circuits.
  • Motor Control: This MOSFET is ideal for motor control applications, such as electric vehicles, industrial motor drives, and robotics, where high voltage and current ratings are essential.
  • Industrial Automation: The STP11NM60 can be used in various industrial automation applications, including motor drives, inverters, and control systems, where high reliability and performance are critical.

Conclusion of STP11NM60

The STP11NM60 is a high-performance N-Channel MOSFET from STMicroelectronics, offering excellent voltage and current handling capabilities, low on-resistance, and advanced switching performance. Its robust package and environmental compliance make it an ideal choice for various high-power applications, including power supplies, motor control, and industrial automation. While the product is not recommended for new designs, the STP11NM60 remains a reliable option for existing applications that require its specific performance characteristics.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STP11NM60 Documents

Download datasheets and manufacturer documentation for STP11NM60

Ersa ST(B,P)11NM60(FP,-1)      
Ersa STP11NM60 View All Specifications      
Ersa ST(B,P)11NM60(FP,-1)      

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