STMicroelectronics_STE70NM60

STMicroelectronics
STE70NM60  
Single FETs, MOSFETs

STMicroelectronics
STE70NM60
278-STE70NM60
MOSFET N-CH 600V 70A ISOTOP
In Stock : 116

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STE70NM60 Description

STE70NM60 Description

The STE70NM60 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ technology, it delivers 600V drain-to-source voltage (Vdss) and 70A continuous drain current (Id) at 25°C, making it ideal for high-power switching. The device features an ultra-low on-resistance (Rds(on)) of 55mΩ at 10V gate drive, ensuring minimal conduction losses. Packaged in the robust ISOTOP® chassis-mount format, it offers excellent thermal performance with a maximum power dissipation of 600W (Tc) and an operating junction temperature up to 150°C.

STE70NM60 Features

  • High Voltage & Current Rating: 600V Vdss and 70A Id for robust power handling.
  • Low Rds(on): 55mΩ @ 10V Vgs, enhancing efficiency in high-current applications.
  • Advanced MDmesh™ Technology: Optimized for reduced switching losses and improved thermal performance.
  • High Input Capacitance (Ciss): 7300pF @ 25V, ensuring stable gate control.
  • Fast Switching: Low gate charge (Qg) of 266nC @ 10V for high-frequency operation.
  • Rugged ISOTOP® Package: Designed for chassis mounting with superior heat dissipation.
  • Wide Vgs Range: ±30V gate-source voltage tolerance for flexible drive requirements.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

STE70NM60 Applications

The STE70NM60 excels in high-power systems requiring efficient switching and thermal management, including:

  • Switched-Mode Power Supplies (SMPS): High-efficiency PFC and DC-DC converters.
  • Motor Drives & Inverters: Industrial and automotive motor control applications.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • Welding Equipment: High-current, high-voltage power stages.
  • Uninterruptible Power Supplies (UPS): Reliable energy backup systems.

Conclusion of STE70NM60

The STE70NM60 combines high voltage capability, low conduction losses, and superior thermal performance, making it a standout choice for power electronics designers. Its MDmesh™ technology and ISOTOP® packaging ensure reliability in harsh environments, while its fast switching and high current handling cater to modern high-efficiency applications. Whether for industrial, automotive, or renewable energy systems, this MOSFET delivers optimal performance, durability, and efficiency.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STE70NM60 Documents

Download datasheets and manufacturer documentation for STE70NM60

Ersa Mult Dev 17/Apr/2023      
Ersa STE70NM60      
Ersa STE70NM60 View All Specifications      
Ersa STE70NM60      

Shopping Guide

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