The STE70NM60 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ technology, it delivers 600V drain-to-source voltage (Vdss) and 70A continuous drain current (Id) at 25°C, making it ideal for high-power switching. The device features an ultra-low on-resistance (Rds(on)) of 55mΩ at 10V gate drive, ensuring minimal conduction losses. Packaged in the robust ISOTOP® chassis-mount format, it offers excellent thermal performance with a maximum power dissipation of 600W (Tc) and an operating junction temperature up to 150°C.
The STE70NM60 excels in high-power systems requiring efficient switching and thermal management, including:
The STE70NM60 combines high voltage capability, low conduction losses, and superior thermal performance, making it a standout choice for power electronics designers. Its MDmesh™ technology and ISOTOP® packaging ensure reliability in harsh environments, while its fast switching and high current handling cater to modern high-efficiency applications. Whether for industrial, automotive, or renewable energy systems, this MOSFET delivers optimal performance, durability, and efficiency.
Download datasheets and manufacturer documentation for STE70NM60