STMicroelectronics_STD16N50M2

STMicroelectronics
STD16N50M2  
Single FETs, MOSFETs

STMicroelectronics
STD16N50M2
278-STD16N50M2
Ersa
STMicroelectronics-STD16N50M2-datasheets-9672463.pdf
MOSFET N-CH 500V 13A TO252
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STD16N50M2 Description

STD16N50M2 Description

The STD16N50M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in a wide range of applications. With its 500V drain-to-source voltage and 13A continuous drain current at 25°C, this device is well-suited for demanding power management and control applications. The STD16N50M2 features a low on-resistance of 280mOhm at 6.5A and 10V, ensuring efficient power delivery and minimal power loss.

STD16N50M2 Features

  • High Voltage Rating: The STD16N50M2 boasts a 500V drain-to-source voltage rating, making it suitable for high-voltage applications.
  • Low On-Resistance: With a maximum on-resistance of 280mOhm at 6.5A and 10V, this MOSFET ensures efficient power delivery and minimal power loss.
  • High Current Capability: Capable of handling up to 13A continuous drain current at 25°C, the STD16N50M2 is ideal for high-current applications.
  • Low Gate Charge: The STD16N50M2 features a low gate charge of 19.5nC at 10V, reducing switching losses and improving efficiency.
  • Surface Mount Package: The DPAK surface mount package allows for easy integration into PCB designs, reducing overall system size and complexity.
  • Compliance with Industry Standards: The STD16N50M2 is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with global environmental and trade regulations.

STD16N50M2 Applications

The STD16N50M2 is an ideal choice for a variety of applications, including:

  • Power Management: Its high voltage and current ratings make it suitable for power supply designs, including DC-DC converters and power factor correction circuits.
  • Motor Control: The STD16N50M2's low on-resistance and high current capability make it well-suited for motor control applications, such as electric vehicles and industrial automation systems.
  • Industrial Automation: Its robust performance characteristics make the STD16N50M2 an excellent choice for demanding industrial automation applications, including robotics and process control systems.
  • Renewable Energy: The STD16N50M2 can be used in renewable energy systems, such as solar inverters and wind turbine control systems, where high voltage and current ratings are critical.

Conclusion of STD16N50M2

The STD16N50M2 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and low gate charge. Its surface mount package and compliance with industry standards make it an ideal choice for a wide range of applications, including power management, motor control, industrial automation, and renewable energy systems. With its unique features and advantages over similar models, the STD16N50M2 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD16N50M2 Documents

Download datasheets and manufacturer documentation for STD16N50M2

Ersa ST(D,F,P)16N50M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa ST(D,F,P)16N50M2      
Ersa New Lead Frame Design 17/Mar/2023      

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