STMicroelectronics
STF25N60M2-EP  
Single FETs, MOSFETs

STMicroelectronics
STF25N60M2-EP
278-STF25N60M2-EP
Ersa
STMicroelectronics-STF25N60M2-EP-datasheets-5971585.pdf
MOSFET N-CH 600V 18A TO220FP
In Stock : 871

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ISO9001
Quality Policy
ISO45001
ISO14001

STF25N60M2-EP Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STF25N60M2-EP belongs to can be classified under the Discrete Semiconductors. STF25N60M2-EP is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STF25N60M2-EP provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
Maximum Operating Temperature
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF25N60M2-EP Documents

Download datasheets and manufacturer documentation for STF25N60M2-EP

Ersa STF25N60M2-EP      
Ersa STF25N60M2-EP      
Ersa Gate threshold voltage 10/Apr/2018      

Shopping Guide

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