The STY60NM60 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power electronics applications. Built using MDmesh™ technology, it offers an optimal balance of low on-resistance (55mΩ @ 30A, 10V) and high 600V drain-to-source voltage (Vdss), making it ideal for high-power switching. With a continuous drain current (Id) of 60A (at case temperature) and a maximum power dissipation of 560W, this device excels in efficiency and thermal management. The MAX247™ package ensures robust mechanical and thermal performance, while RoHS3 compliance and REACH unaffected status make it environmentally friendly.
This MOSFET is particularly suited for:
The STY60NM60 stands out as a high-efficiency, high-voltage MOSFET with low Rds(On), fast switching, and superior thermal performance. Its MDmesh™ technology and MAX247™ package make it a preferred choice for power electronics engineers requiring reliability in demanding applications. Whether in SMPS, motor drives, or inverters, this device delivers optimal performance, durability, and energy efficiency, making it a top-tier solution in the 600V power MOSFET category.
Download datasheets and manufacturer documentation for STY60NM60